DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3716
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3716 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3716
2SK3716-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 6.5 mΩ MAX. (V
GS
= 10 V, I
D
= 30 A)
R
DS(on)2
= 9.1 mΩ MAX. (V
GS
= 4.5 V, I
D
= 30 A)
•
Low C
iss
: C
iss
= 2700 pF TYP.
•
Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Note2
Repetitive Avalanche Energy
Notes 1.
2.
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
40
±20
±60
±240
84
1.0
150
–55 to +150
32
100
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
PW
≤
10
µ
s, Duty Cycle
≤
1%
V
DD
= 20 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, T
ch(peak)
≤
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16538EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003
2SK3716
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 40 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 30 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 20 V, I
D
= 30 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
22
2.0
43
5.2
6.6
2700
770
290
11
13
69
14
2.5
Drain to Source On-state Resistance
6.5
9.1
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 32 V
V
GS
= 10 V
I
D
= 60 A
I
F
= 60 A, V
GS
= 0 V
I
F
= 60 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
50
9
13
0.94
40
42
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16538EJ2V0DS
2SK3716
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(DC)
= 60 A
I
D
- Drain Current - A
I
D(pulse)
= 240 A
100
DC
R
DS(on)
Limited
(at V
GS
= 10 V)
PW = 100
µs
1 ms
Single Pulse
10 ms
T
C
= 25°C
0.1
1
10
100
10
1
0.1
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
1000
Channel to Ambient R
th(ch-A)
= 125°C/W
100
10
1
0.1
0.01
0.001
100
µ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Channel to Case R
th(ch-C)
= 1.49°C/W
Single Pulse
100
1000
Data Sheet D16538EJ2V0DS
3
2SK3716
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
Pulsed
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
V
GS
= 10 V
4.5 V
4.0 V
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
0.01
0.001
0
1
2
3
T
A
= 150°C
75°C
25°C
−55°C
I
D
- Drain Current - A
I
D
- Drain Current - A
V
DS
= 10 V
Pulsed
4
5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
2.5
2
1.5
1
0.5
0
-100
T
A
= 150°C
75°C
25°C
10
−55°C
-50
0
50
100
150
200
1
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
20
18
16
14
12
10
8
6
4
2
0
1
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
Pulsed
V
GS
= 4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
I
D
= 60 A
30 A
12 A
Pulsed
4.5 V
10 V
10
100
1000
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16538EJ2V0DS
2SK3716
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
16
14
12
10
8
6
4
2
0
-100
I
D
= 30 A
Pulsed
V
GS
= 4 V
4.5 V
10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
R
DS(on)
- Drain to Source On-state Resistance - mΩ
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
C
iss
1000
C
oss
C
rss
100
-50
0
50
100
150
200
0.1
1
10
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
V
DS
- Drain to Source Voltage - V
45
40
35
30
25
20
15
10
5
0
0
10
V
DS
I
D
= 60 A
Pulsed
30
40
50
V
GS
V
DD
= 32 V
20 V
8V
9
8
7
6
5
4
3
2
1
0
20
100
t
f
t
d(off)
t
r
10
t
d(on)
1
0.1
1
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
V
GS
= 10 V
100
4.5 V
10
0V
1
0.1
0.01
0
0.5
1
Pulsed
1.5
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/
µ
s
V
GS
= 0 V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
10
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D16538EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
Ω
50
10
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