Silicon Junction FETs (Small Signal)
2SK374
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
0.65±0.15
2.8
–0.3
+0.2
unit: mm
0.65±0.15
1.5
–0.05
+0.25
s
Features
q
Low noise-figure (NF)
q
High gate to drain voltage V
GDO
q
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
0.95
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
0.4
–0.05
+0.1
2
1.45
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
ch
T
stg
55
−55
−55
30
10
200
150
−55
to +150
V
V
V
mA
mA
mW
°C
°C
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 2B
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Symbol
I
DSS*
I
GSS
V
GDC
V
GSC
g
m
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
−30V,
V
DS
= 0
I
G
=
−100µA,
V
DS
= 0
V
DS
= 10V, I
D
= 10µA
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100kΩ
f = 100Hz
2.5
7.5
6.5
1.9
2.5
−55
−80
−5
min
1
typ
max
20
−10
Unit
mA
nA
V
V
mS
pF
pF
dB
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NF
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
S
10 to 20
2BS
Marking Symbol
0 to 0.1
Parameter
Symbol
Ratings
Unit
0.1 to 0.3
0.4±0.2
0.8
s
Absolute Maximum Ratings
(Ta = 25°C)
1.1
–0.1
0.16
–0.06
+0.2
+0.1
1
Silicon Junction FETs (Small Signal)
P
D
Ta
240
5
Ta=25˚C
200
2SK374
I
D
V
DS
10
Ta=25˚C
I
D
V
DS
Allowable power dissipation P
D
(mW)
4
8
Drain current I
D
(mA)
160
Drain current I
D
(mA)
V
GS
=0V
3
V
GS
=0
– 0.2V
6
– 0.2V
120
– 0.4V
4
– 0.6V
2
– 0.8V
–1.0V
2
– 0.4V
– 0.6V
80
40
1
– 0.8V
–1.0V
–1.2V
0
0.6
0
2
4
6
8
10
12
0
0
20
40
60
80 100 120 140 160
0
0
0.1
0.2
0.3
0.4
0.5
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Drain to source voltage V
DS
(V)
I
D
V
GS
16
V
DS
=10V
14
12
g
m
V
GS
12
V
DS
=10V
Ta=25˚C
g
m
I
D
V
DS
=10V
Ta=25˚C
Mutual conductance g
m
(mS)
10
Mutual conductance g
m
(mS)
10
Drain current I
D
(mA)
12
10
8
6
4
75˚C
2
0
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
8
8
I
DSS
=7.5mA
Ta=–25˚C
25˚C
6
6
4
4
2
2
0
–2.0
0
–1.6
–1.2
– 0.8
– 0.4
0
0
2
4
6
8
10
Gate to source voltage V
GS
(V)
Gate to source voltage V
GS
(V)
Drain current I
D
(mA)
C
iss
V
DS
V
GS
=0
Ta=25˚C
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
C
oss
V
DS
Output capacitance (Common source) C
oss
(pF)
8
V
GS
=0
Ta=25˚C
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Input capacitance (Common source) C
iss
(pF)
16
Drain to source voltage V
DS
(V)
Drain to source voltage V
DS
(V)
2
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