DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3749
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG
DESCRIPTION
The 2SK3749 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 2.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
2.0 ± 0.2
1
3
0.9 ± 0.1
•
Because of its high input impedance, there’s no need to
consider drive current
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-70 (SSP)
2SK3749
Marking:
G27
1 : Source
2 : Gate
3 : Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
50
±7.0
±100
±200
150
150
−55
to +150
V
V
mA
mA
mW
°C
°C
Gate
Protection
Diode
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
0 to 0.1
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17136EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
0.15
–0.05
Source
+0.1
•
Gate can be driven by 2.5 V
0.3
FEATURES
Marking
0.3
+0.1
–0
stereos and video cameras.
+0.1
actuator for low-current portable systems such as headphone
0.3
–0
0.65 0.65
2
2004
2SK3749
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPRATURE
180
P
T
- Total Power Dissipation - mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
150
120
90
60
30
0
0
30
90
120
150
60
T
A
- Ambient Temperature - ˚C
180
I
D
- Drain Current - mA
80
4.0 V
3.5 V
3.0 V
60
2.5 V
40
20
V
GS
= 2.0 V
0
0
2
3
4
1
V
DS
- Drain to Source Voltage - V
5
TRANSFER CHARACTERISTICS
100
|y
fs
| - Forward Transfer Admittance - mS
V
DS
= 3.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 3.0 V
10
I
D
- Drain Current - mA
T
A
= –25˚C
50
25˚C
1
T
A
= 75˚C
25˚C
–25˚C
125˚C
0.1
20
0.01
0.001
0
1
2
3
V
GS
- Gate to Source Voltage - V
10
1
2
5
10
20
I
D
- Drain Current - A
50
100
100
50
R
DS(on)
- Drain to Source On-State Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
100
50
T
A
= 75˚C
25˚C
–25˚C
V
GS
= 4.0 V
20
10
5
T
A
= 75˚C
25˚C
–25˚C
20
10
5
2
1
1
2
5
10
20
I
D
- Drain Current - mA
50
100
2
1
1
2
5
10
20
I
D
- Drain Current - mA
50
100
Data Sheet D17136EJ1V0DS
3
2SK3749
•
The information in this document is current as of April, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
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•
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•
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•
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