2SK3779-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
250
250
59
±236
±30
59
1115.2
41
20
5
210
3.13
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1
Note *2
Note *3
Source(S)
Note *1:Tch
<
150°C,Repetitive and Non-repetitive
=
Note *2:StartingTch=25°C,I
AS
=24A,L=3.25mH,
V
CC
=48V,R
G
=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:I
F
< -I
D
, -di/dt=50A/µs,V
CC
< BV
DSS
, Tch< 150°C
=
=
=
kV/µs V
DS
< 250V
=
kV/µs Note *4
Tc=25°C
W
Ta=25°C
°C
°C
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=29.5A V
GS
=10V
I
D
=29.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V I
D
=29.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=150V
I
D
=32A
V
GS
=10V
I
F
=59A V
GS
=0V T
ch
=25°C
I
F
=59A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
250
3.0
T
ch
=25°C
T
ch
=125°C
Typ.
Max.
5.0
25
250
100
53
Units
V
V
µA
nA
mΩ
S
pF
12
43
24
3800
5400
530
795
35
52.5
40
60
62
93
70
105
20
30
80
120
30
45
25
38
1.20
1.50
370
4.5
ns
nC
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.595
40.0
Units
°C/W
°C/W
1
2SK3779-01R
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
300
120
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
20V
10V
8V
100
200
80
7V
PD [W]
ID [A]
60
6.5V
100
40
20
VGS=6.0V
0
0
25
50
75
100
125
150
0
0
5
10
Tc [
°
C]
VDS [V]
100
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
gfs [S]
1
10
100
VGS[V]
ID [A]
0.20
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=6V
6.5V
0.15
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=29.5A,VGS=10V
0.15
7V
RDS(on) [
Ω
]
0.10
RDS(on) [
Ω
]
max.
0.10
typ.
0.05
8V
0.05
20V
10V
0.00
0
10
20
30
40
50
60
70
80
90
100
110
0.00
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3779-01R
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=59A,Tch=25
°
C
12
Vcc= 50V
max.
10
125V
200V
VGS(th) [V]
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140
Tch [
°
C]
Qg [nC]
10
4
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
1000
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
3
100
Coss
C [pF]
10
2
IF [A]
Crss
-1
0
1
2
3
10
10
1
1
10
0
10
10
10
10
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
10
4
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V,VGS=10V,RG=10
Ω
1200
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=59A
I
AS
=24A
1000
10
3
800
tr
I
AS
=36A
600
t [ns]
10
2
td(off)
td(on)
tf
EAV [mJ]
400
10
1
I
AS
=59A
200
10
0
0
-1
10
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
Microcontroller MCU
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