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2SK3783

Description
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
File Size103KB,5 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3783 Overview

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3783
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3783 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
1.0
FEATURES
High gain
−0.5
dB (V
DS
= 2.0 V, C = 5 pF, R
L
= 2.2 kΩ)
Low noise
0 to 0.05
0.6
Super small area package
1006 TYP. lead less
0.25
1
0.35
PACKAGE
4pXSLP04 (1006)
ORDERING INFORMATION
PART NUMBER
2SK3783
2
0.15
4
0.65
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
−1.0
V)
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
−20
10
10
100
125
−55
to +125
V
V
mA
mA
mW
°C
°C
EQUIVALENT CIRCUIT
(Top View)
4
3
1
1: Source
2: Gate
3: Gate
4: Drain
MAX. 0.4
−109
dB (V
DS
= 2.0 V, C = 5 pF, R
L
= 2.2 kΩ)
2
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17002EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2004
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