BD676A/678A/680A/682
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD676A
: BD678A
: BD680A
: BD682
1
TO-126
2.Collector
3.Base
1. Emitter
Value
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-4
-6
- 100
14
88
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C/W
°C
°C
V
CEO
Collector-Emitter Voltage : BD676A
: BD678A
: BD680A
: BD682
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
R
θja
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD676A
: BD678A
: BD680A
: BD682
Collector-Base Voltage
: BD676A
: BD678A
: BD680A
: BD682
Test Condition
I
C
= - 50mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 200
- 200
- 200
- 200
- 500
- 500
- 500
- 500
-2
750
750
- 2.8
- 2.5
- 2.5
- 2.5
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
mA
Typ.
Max.
Units
I
CBO
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, V
BE
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 1.5A
I
C
= - 2A, I
B
= - 40mA
I
C
= - 1.5A, I
B
= - 30mA
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 1.5A
I
CEO
Collector Cut-off Current : BD676A
: BD678A
: BD680A
: BD682
Emitter Cut-off Current
* DC Current Gain
: BD676A/678A/680A
: BD682
I
EBO
h
FE
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BD676A/678A/680A
: BD682
* Base-Emitter On Voltage : BD676A/678A/680A
: BD682
V
BE
(on)
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
BD676A/678A/680A/682
Typical Characteristics
10000
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= -3V
-2.4
I
C
= 250 I
B
-2.0
h
FE
, DC CURRENT GAIN
-1.6
1000
-1.2
-0.8
-0.4
100
-0.1
-1
-10
-0.0
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-4.0
-3.6
V
CE
= 3V
I
C
(max). Pulsed
I
C
(max). Continuous
10
µ
s
I
C
[A], COLLECTOR CURRENT
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
-0.0
-0.0
I
C
[A], COLLECTOR CURRENT
-3.2
DC
-1
100
µ
s
BD676A
BD678A
BD680A
BD682
-0.1
-1
-10
1ms
10ms
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
20
P
C
[W], POWER DISSIPATION
16
12
8
4
0
0
25
50
o
75
100
125
150
175
200
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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