DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3793
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3793 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3793
PACKAGE
Isolated TO-220
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 125 mΩ MAX. (V
GS
= 10 V, I
D
= 6 A)
R
DS(on)2
= 148 mΩ MAX. (V
GS
= 4.5 V, I
D
= 6 A)
•
Low C
iss
: C
iss
= 900 pF TYP.
•
Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
100
±20
±12
±22
20
2.0
150
−55
to +150
10
10
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 50 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16777EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
2004
2SK3793
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 100 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 6 A
V
GS
= 4.5 V, I
D
= 6 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 50 V, I
D
= 6 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
5.0
2.0
10.3
89
96
900
110
50
9
5
30
4
2.5
Drain to Source On-state Resistance
125
148
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 80 V
V
GS
= 10 V
I
D
= 12 A
I
F
= 12 A, V
GS
= 0 V
I
F
= 12 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
21
3.0
6.2
0.89
52
94
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16777EJ1V0DS
2SK3793
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
P
T
- Total Power Dissipation - W
20
15
10
5
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
PW = 100
µs
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(DC)
1 ms
Power Dissipation Limited
T
C
- Case Temperature -
°C
I
D
- Drain Current - A
10
1
0.1
T
C
= 25°C
Ｓingle
pulse
10 ms
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 62.5°C/W
10
R
th(ch-C)
= 6.25°C/W
1
0.1
Single pulse
0.01
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16777EJ1V0DS
3
2SK3793
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
Pulsed
20
15
10
5
0
0
1
2
3
4
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
0.001
1
2
3
4
5
T
A
= 150°C
75°C
25°C
−55°C
I
D
- Drain Current - A
4.5 V
I
D
- Drain Current - A
V
GS
= 10 V
V
DS
= 10 V
Pulsed
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
T
A
=
−
55°C
25°C
75°C
150°C
3
2.5
2
1.5
1
0.5
0
-100
10
1
0.1
V
DS
= 10 V
Pulsed
0.01
0.01
0.1
1
10
100
-50
0
50
100
150
200
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
150
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
150
I
D
= 12 A
100
6A
100
V
GS
= 4.5 V
10 V
50
50
0
0.1
1
10
100
0
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16777EJ1V0DS
2SK3793
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
250
200
150
100
50
Pulsed
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
1000
V
GS
= 4.5 V
10 V
C
iss
100
C
oss
C
rss
0
-100
-50
0
50
100
150
200
10
0.001
0.1
10
1000
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
120
V
DS
- Drain to Source Voltage - V
100
80
60
40
20
0
V
GS
V
DS
0
5
10
15
20
25
V
DD
= 80 V
50 V
20 V
10
8
6
4
2
0
t
d(off)
10
t
r
t
f
t
d(on)
1
0.1
1
10
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
V
GS
= 0 V
di/dt =100 A/µs
100
10
V
GS
= 10 V
4.5 V
1
0V
t
rr
- Reverse Recovery Time - ns
Pulsed
I
F
- Diode Forward Current - A
10
0.1
0.01
0
0.5
1
1.5
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D16777EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
Ω
I
D
= 12 A
12
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