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2SK3811-ZP

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size130KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3811-ZP Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3811
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3811 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3811-ZP
PACKAGE
TO-263 (MP-25ZP)
FEATURES
Super low on-state resistance
R
DS(on)
= 1.8 mΩ MAX. (V
GS
= 10 V, I
D
= 55 A)
High Current Rating: I
D(DC)
= ±110 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
40
±20
±110
±440
213
1.5
150
−55
to +150
518
72
518
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 20 V, R
G
= 25
Ω,
V
GS
= 20
0 V, L = 100
µ
H
3.
R
G
= 25
Ω,
T
ch(peak)
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16737EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004

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