DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3812-ZP
PACKAGE
TO-263 (MP-25ZP)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 2.8 mΩ MAX. (V
GS
= 10 V, I
D
= 55 A)
R
DS(on)2
= 3.7 mΩ MAX. (V
GS
= 4.5 V, I
D
= 55 A)
•
High current rating: I
D(DC)
= ±110 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
(TO-263)
60
±20
±110
±440
213
1.5
150
−55
to +150
397
63
397
V
V
A
A
W
W
°C
°C
mJ
A
mJ
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
3.
T
ch(peak)
≤
150°C, R
G
= 25
Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16738EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
2SK3812
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 55 A
V
GS
= 10 V, I
D
= 55 A
V
GS
= 4.5 V, I
D
= 55 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 55 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
µ
A
nA
V
S
1.5
50
2.0
110
2.3
2.6
16800
1600
1000
42
160
140
15
2.5
Drain to Source On-state Resistance
2.8
3.7
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 110 A
I
F
= 110 A, V
GS
= 0 V
I
F
= 110 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
250
41
66
0.87
53
74
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16738EJ1V0DS
2SK3812
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(DC)
Power Dissipation Limited
I
D(pulse)
PW =100
µs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
P
T
- Total Power Dissipation - W
200
150
100
50
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
I
D
- Drain Current - A
100
1 ms
10
10 ms
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
R
th(ch-A)
= 83.3°C/W
100
10
1
R
th(ch-C)
= 0.587°C/W
0.1
0.01
Single pulse
0.001
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16738EJ1V0DS
3
2SK3812
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
Pulsed
400
I
D
- Drain Current - A
300
200
100
0
0
0.4
0.8
1.2
1.6
V
DS
- Drain to Source Voltage - V
V
GS
= 10 V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
0.01
0.001
1
2
3
4
5
T
A
= 150°C
75°C
25°C
−55°C
V
DS
= 10 V
Pulsed
4.5 V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
3.0
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2.0
1.5
1.0
0.5
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
V
DS
= 10 V
I
D
= 1 mA
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 10 V
Pulsed
100
T
A
= 150°C
75°C
25°C
−55°C
10
1
0.1
1
10
100
1000
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
6
Pulsed
5
4
3
2
1
0
1
10
100
1000
I
D
- Drain Current - A
V
GS
= 4.5 V
10 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
Pulsed
5
4
3
2
1
0
0
2
4
6
8
10 12 14 16 18 20
V
GS
- Gate to Source Voltage - V
I
D
= 110 A
55 A
22 A
4
Data Sheet D16738EJ1V0DS
2SK3812
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
10 V
2
1
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature - °C
V
GS
= 4.5 V
C
iss
, C
oss
, C
rss
- Capacitance - pF
Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
V
GS
= 0 V
f = 1 MHz
C
iss
10000
1000
C
oss
C
rss
100
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 30 V
V
GS
= 10 V
R
G
= 0
Ω
1
0.1
1
10
100
1000
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
I
D
= 110 A
50
40
30
20
10
0
0
50
100
150
200
250
V
DS
V
GS
V
DD
= 48 V
30 V
12 V
10
8
6
4
2
0
300
12
100
10
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
V
GS
= 0 V
100
100
4.5 V
0V
10
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
V
GS
= 10 V
10
1
Pulsed
0.1
0
0.5
1
1.5
1
0.1
1
10
100
1000
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D16738EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
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