DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3900
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3900 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3900-ZP
PACKAGE
TO-263 (MP-25ZP)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 8.0 mΩ MAX. (V
GS
= 10 V, I
D
= 41 A)
R
DS(on)2
= 10 mΩ MAX. (V
GS
= 4.5 V, I
D
= 41 A)
•
Low C
iss
: C
iss
= 3500 pF TYP.
•
Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±82
±246
104
1.5
150
−55
to +150
141
37.5
141
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
3.
R
G
= 25
Ω,
T
ch(peak)
≤
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17175EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
2SK3900
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 41 A
V
GS
= 10 V, I
D
= 41 A
V
GS
= 4.5 V, I
D
= 41 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 41 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
28.1
2.0
56
6.3
7.4
3500
660
240
18
11
62
5.5
2.5
Drain to Source On-state Resistance
8.0
10
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 82 A
I
F
= 82 A, V
GS
= 0 V
I
F
= 82 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
65.5
11.5
16.5
0.95
41
61
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D17175EJ1V0DS
2SK3900
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
150
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
125
100
75
50
25
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
= 246 A
100
µs
1 ms
I
D(DC)
= 82 A
I
D
- Drain Current - A
100
10
Power Dissipation Limited
10 ms
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
1000
Single pulse
100
R
th(ch-A)
= 83.3°C/W
10
R
th(ch-C)
= 1.2°C/W
1
0.1
0.01
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet D17175EJ1V0DS
3
2SK3900
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
FORWARD TRANSFER CHARACTERISTICS
1000
I
D
- Drain Current - A
I
D
- Drain Current - A
250
V
GS
= 10 V
200
150
100
50
0
0
1
2
3
Pulsed
4
5
4.5 V
100
T
ch
=
−55°C
25°C
10
75°C
150°C
1
0.1
0.01
0.001
0
1
2
3
4
V
DS
= 10 V
Pulsed
5
6
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
4
V
GS(off)
- Gate Cut-off Voltage - V
3.5
3
2.5
2
1.5
1
0.5
0
-75
-25
25
75
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
I
D
= 1 mA
T
ch
=
−55°C
25°C
75°C
150°C
10
1
V
DS
= 10 V
Pulsed
0.1
1
10
100
0.1
125
175
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
24
20
16
12
8
4
0
1
Pulsed
24
20
16
12
8
4
0
0
4
8
12
I
D
= 41 A
Pulsed
V
GS
= 4.5 V
10 V
10
100
1000
16
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D17175EJ1V0DS
2SK3900
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
16
12
V
GS
= 4.5 V
8
4
0
-75
-25
25
75
125
175
10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
C
iss
10000
1000
C
oss
100
C
rss
I
D
= 41 A
Pulsed
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
DD
= 30 V
V
GS
= 10 V
R
G
= 0
Ω
t
d(off)
t
d(on)
t
r
t
f
50
40
30
20
10
0
V
DD
= 48 V
30 V
12 V
I
D
= 82 A
10
8
V
GS
6
4
100
10
V
DS
2
0
1
0.1
1
10
100
I
D
- Drain Current - A
0
10
20
30
40
50
60
70
80
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
V
GS
= 10 V
10
1
0.1
0.01
0
0.5
1
Pulsed
1.5
0V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
1000
100
10
di/dt = 100 A/µs
V
GS
= 0 V
0.1
1
10
100
1
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D17175EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
1000
60
12
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