DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3943
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3943 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3943-ZP
PACKAGE
TO-263 (MP-25ZP)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 3.5 mΩ MAX. (V
GS
= 10 V, I
D
= 41 A)
•
Low C
iss
: C
iss
= 5800 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
40
±20
±82
±328
104
1.5
150
−55
to +150
185
43
185
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 20 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
3.
T
ch(peak)
≤
150°C, R
G
= 25
Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17188EJ1V0DS00 (1st edition)
Date Published February 2005 NS CP(K)
Printed in Japan
2005
2SK3943
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 40 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 41 A
V
GS
= 10 V, I
D
= 41 A
V
GS
= 5.5 V, I
D
= 41 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 20 V, I
D
= 41 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
1.0
±10
UNIT
µ
A
µ
A
V
S
2.0
21
2.5
43
2.9
3.8
5800
860
510
29
10
69
12
3.0
Drain to Source On-state Resistance
3.5
5.6
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)1
V
F(S-D)2
V
DD
= 32 V
V
GS
= 10 V
I
D
= 82 A
I
F
= 60 A, V
GS
= 0 V
I
F
= 82 A, V
GS
= 0 V
I
F
= 82 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
93
28
28
0.88
0.92
40
49
1.2
1.5
V
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
t
rr
Q
rr
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D17188EJ1V0DS
2SK3943
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
P
T
- Total Power Dissipation - W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
125
100
75
50
25
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
= 328 A
I
D
- Drain Current - A
100
I
D(DC)
= 82 A
100
µ
s
10
1 ms
Power Dispation Limited
10 ms
T
C
= 25°C
Single pulse
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
10
R
th(ch-A)
= 83.3°C/W
1
R
th(ch-C)
= 1.2°C/W
0.1
Single pulse
0.01
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D17188EJ1V0DS
3
2SK3943
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
400
350
I
D
- Drain Current - A
1000
Pulsed
V
GS
= 10 V
I
D
- Drain Current - A
300
250
200
150
100
50
0
0
1
100
10
1
0.1
0.01
5.5 V
T
ch
=
−55°C
25°C
75°C
125°C
150°C
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
6
7
2
3
4
5
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
4
3.5
3
2.5
2
1.5
1
0.5
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
T
ch
=
−
55°C
25°C
75°C
1
25°C
1
50°C
V
DS
= 10 V
I
D
= 1 mA
10
1
V
DS
= 10 V
Pulsed
0.1
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10
9
8
7
6
5
4
3
2
1
0
1
10
100
1000
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10
Pulsed
8
6
4
2
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
Pulsed
V
GS
= 5.5 V
I
D
= 41 A
10 V
4
Data Sheet D17188EJ1V0DS
2SK3943
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
8
7
6
5
4
3
2
1
0
-75
-25
25
75
125
175
10 V
V
GS
= 5.5 V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100000
9
I
D
= 41 A
Pulsed
10000
C
iss
1000
V
GS
= 0 V
f = 1 MHz
100
0.01
0.1
1
10
C
oss
C
rss
100
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
30
25
20
15
10
5
0
100
t
d(off)
t
d(on)
t
f
V
DD
= 32 V
20 V
8V
12
10
8
6
V
GS
4
2
0
100
10
t
r
V
DS
1
0.1
1
10
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0
20
40
60
80
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
I
F
- Diode Forward Current - A
1000
100
10
1
0.1
Pulsed
V
GS
= 10 V
10
1
0.1
0.01
0
0.5
0V
I
D
- Drain Current - A
100
T
ch
=
−55°C
25°C
75°C
125°C
150°C
V
GS
= 0 V
Pulsed
0
0.5
1
1.5
0.01
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
V
F(S-D)
- Source to Drain Voltage - V
Data Sheet D17188EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
Ω
35
I
D
= 82 A
14
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