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2SK3943

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size137KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3943 Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3943
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3943 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3943-ZP
PACKAGE
TO-263 (MP-25ZP)
FEATURES
Super low on-state resistance
R
DS(on)1
= 3.5 mΩ MAX. (V
GS
= 10 V, I
D
= 41 A)
Low C
iss
: C
iss
= 5800 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
40
±20
±82
±328
104
1.5
150
−55
to +150
185
43
185
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 20 V, R
G
= 25
Ω,
V
GS
= 20
0 V, L = 100
µ
H
3.
T
ch(peak)
150°C, R
G
= 25
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17188EJ1V0DS00 (1st edition)
Date Published February 2005 NS CP(K)
Printed in Japan
2005

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