2SK65 datasheet, PDF - EEWORLD Datasheet

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2SK65: DescriptionSilicon N-Channel Junction FET; CategoryDiscrete semiconductor The transistor; File Size29KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SK65 Overview

Silicon N-Channel Junction FET

2SK65 Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Maximum drain current (ID)	0.002 A
FET technology	JUNCTION
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	80 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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Silicon Junction FETs (Small Signal)

2SK65

Silicon N-Channel Junction FET

For impedance conversion in low frequency

For electret capacitor microphone

s

Features

q

Diode is connected between gate and source

q

Low noise voltage

unit: mm

4.5±0.1

2.0±0.2

1.0

s

Absolute Maximum Ratings

(Ta = 25°C)

Parameter

Drain to Source voltage

Gate to Drain voltage

Drain to Source current

Drain to Gate current

Gate to Source current

Allowable power dissipation

Operating ambient temperature

Storage temperature

Symbol

V

DSO

V

GDO

I

DSO

I

DGO

I

GSO

P

D

T

opr

T

stg

Ratings

12

−12

2

20

−10

to +70

−20

to +150

Unit

V

mA

mW

°C

1

0.45±0.05

2.54

2

3

0.8±0.1

10.5±0.5

4.0±0.2

s

Electrical Characteristics

(Ta = 25°C)

Parameter

Drain to Source cut-off current

Mutual conductance

Symbol

I

DSS*

g

m

NV

Conditions

V

DS

= 4.5V, V

GS

= 0, R

S

= 2.2kΩ ± 1%

V

DS

= 4.5V, V

GS

= 0

R

S

= 2.2kΩ ± 1%, f = 1kHz

V

DS

= 4.5V, R

S

= 2.2kΩ ± 1%

C

G

= 10pF, A-curve

V

DS

= 4.5V, R

S

= 2.2kΩ ± 1%

C

G

= 10pF, e

G

= 100mV, f = 70Hz

V

DS

= 12V, R

S

= 2.2kΩ ± 1%

C

G

= 10pF, e

G

= 100mV, f = 70Hz

V

DS

= 1V, R

S

= 2.2kΩ ± 1%

C

G

= 10pF, e

G

= 100mV, f = 70Hz

−10

−9.5

−11

min

0.04

300

500

typ

max

0.8

Unit

mA

µS

µV

Noise figure

4

G

V1*

Voltage gain

G

V2*

G

V3*

0.7

1: Drain

2: Gate

3: Source

S Type Package

dB

*

I

DSS

rank classification and G

V

value

Runk

I

DSS

(mA)

G

V1

(dB)

G

V2

(dB)

∆|

G

V1

−

G

V2

| (dB)

P

0.04 to 0.2

>

−13

>

−12

<3

Q

0.15 to 0.8

>

−12

>

−11

<3

1

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