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SD101BW

Description
0.1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size103KB,3 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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SD101BW Overview

0.1 A, SILICON, SIGNAL DIODE

SD101AW THRU SD101CW
Schottky Diodes
FEATURES
SOD-123
.022 (0.55)
For general purpose applications.
The LL101 series is a metal-on-silicon
Schottky barrier device which is pro-
tected by a PN junction guard ring. The
low forward voltage drop and fast switching
make it ideal for protection of MOS
devices, steering, biasing, and coupling
diodes for fast switching and low logic level applications.
case with type designation LL101A thru LL101C
and in the DO-35 case with type designations
SD101A thru SD101C.
Cathode Mark
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Top View
max. .004 (0.1)
max. .053 (1.35)
min. .010 (0.25)
max. .006 (0.15)
.067 (1.70)
.055 (1.40)
These diodes are also available in the MiniMELF
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Peak Inverse Voltage
SD101AW
SD101BW
SD101CW
V
RRM
V
RRM
V
RRM
P
tot
I
FSM
T
j
T
S
Value
60
50
40
400
1) 2)
2
125
2)
– 65 to +150
2)
Unit
V
V
V
mW
A
°C
°C
Power Dissipation (Infinite Heat Sink)
Max. Single Cycle Surge
10
µs
Square Wave
Junction Temperature
Storage Temperature Range
2)
Valid provided that electrodes are kept at ambient temperature
4/98

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SD101BW SD101CW SD101AW
Description 0.1 A, SILICON, SIGNAL DIODE 0.015 A, 40 V, SILICON, SIGNAL DIODE 0.1 A, SILICON, SIGNAL DIODE

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