Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s
Features
q
High-speed switching
q
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
0 to 0.1
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
150
150
−55
to +150
Unit
V
V
mA
mA
mW
°C
°C
0.7±0.1
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3N
Internal Connection
D
G
S
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100µA, V
GS
= 0
I
D
= 100µA, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200Ω
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200Ω
10
20
min
typ
max
10
50
50
1.5
20
15
5
1
3.5
50
Unit
µA
µA
V
V
Ω
mS
pF
pF
pF
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source) C
oss
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Turn-off time
*
t
on
t
off*
V
out
*
t
on
, t
off
measurement circuit
200Ω
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
90%
50Ω
100µF
V
GS
= 5V
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta = 25°C)
0.2
0.3
–0
+0.1
1
Silicon MOS FETs (Small Signal)
P
D
Ta
240
120
2SK664
I
D
V
DS
60
| Y
fs
|
V
GS
Forward transfer admittance |Y
fs
| (mS)
Ta=25˚C
V
DS
=5V
Ta=25˚C
50
Allowable power dissipation P
D
(mW)
200
100
Drain current I
D
(mA)
V
GS
=6.0V
80
5.5V
5.0V
60
160
40
120
4.5V
30
80
40
4.0V
3.5V
3.0V
2.5V
0
2
4
6
8
10
12
20
40
20
10
0
0
20
40
60
80 100 120 140 160
0
0
0
2
4
6
8
10
12
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
C
iss
, C
oss
, C
rss
V
DS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
12
V
GS
=0
f=1MHz
Ta=25˚C
120
I
D
V
GS
Drain to source ON-resistance R
DS(on)
(
Ω
)
120
V
DS
=5V
Ta=25˚C
100
R
DS(on)
V
GS
I
D
=20mA
100
10
C
iss
8
Drain current I
D
(mA)
80
Ta=–25˚C
25˚C
80
6
60
75˚C
60
Ta=75˚C
25˚C
–25˚C
4
C
oss
2
C
rss
1
3
10
30
100
40
40
20
20
0
0
0
2
4
6
8
10
12
0
0
2
4
6
8
10
12
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
Gate to source voltage V
GS
(V)
V
IN
I
O
100
30
V
O
=5V
Ta=25˚C
Input voltage V
IN
(V)
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
Output current I
O
(mA)
2
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