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2W04G

Description
2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size116KB,2 Pages
ManufacturerJGD(Jinan Gude Electronic Device)
Websitehttp://www.jgd.com.cn/
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2W04G Overview

2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

2W04G Parametric

Parameter NameAttribute value
MakerJGD(Jinan Gude Electronic Device)
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature150 °C
Maximum output current2 A
Maximum repetitive peak reverse voltage400 V
surface mountNO

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2W04G 2W005G 2W01G 2W02G 2W06G 2W08G
Description 2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifier Diode, 2A, 200V V(RRM), 2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A
Maximum repetitive peak reverse voltage 400 V 50 V 100 V 200 V 600 V 800 V
surface mount NO NO NO NO NO NO
Maker JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) - JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device)
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