2W08G datasheet, PDF - EEWORLD Datasheet

2W08G: Description2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size116KB，2 Pages; ManufacturerJGD（Jinan Gude Electronic Device）; Websitehttp://www.jgd.com.cn/

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2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

Parameter Name	Attribute value
Maker	JGD（Jinan Gude Electronic Device）
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	50 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	2 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO

	2W08G	2W005G	2W01G	2W02G	2W04G	2W06G
Description	2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	Bridge Rectifier Diode, 2A, 200V V(RRM),	2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A
Maximum repetitive peak reverse voltage	800 V	50 V	100 V	200 V	400 V	600 V
surface mount	NO	NO	NO	NO	NO	NO
Maker	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	-	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）

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