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W3EG64128S262BD4

Description
DDR DRAM Module, 128MX64, CMOS, SODIMM-200
Categorystorage    storage   
File Size119KB,9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

W3EG64128S262BD4 Overview

DDR DRAM Module, 128MX64, CMOS, SODIMM-200

W3EG64128S262BD4 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeMODULE
package instructionDIMM,
Contacts200
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N200
memory density8589934592 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
White Electronic Designs
W3EG64128S-AD4
-BD4
PRELIMINARY*
1GB – 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL
FEATURES
Double-data-rate architecture
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect
Dual Rank
Power supply: 2.5V ± 0.2V
JEDEC standard 200 pin SO-DIMM package
Package height options:
BD4: 31.75 mm (1.25”)
* This product is under development, is not qualified or characterized and is subject to
change without notice.
DESCRIPTION
The W3EG64128S is a 2x64Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
component. The module consists of eight 128Mx8 stack
DDR SDRAMs in 66 pin TSOP packages mounted on a
200 pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
DDR333 @CL=2.5
Clock Speed
CL-t
RCD
-t
RP
166MHz
2.5-3-3
DDR266 @CL=2
133MHz
2-2-2
DDR266 @CL=2.5
133MHz
2.5-3-3
DDR200 @CL=2
100MHz
2-2-2
May 2004
Rev. 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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