ZHB10500 datasheet, PDF - EEWORLD Datasheet

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ZHB10500: DescriptionNo description yet; CategoryDiscrete semiconductor High density diode; File Size2MB，1 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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ZHB10500 Overview

No description yet

ZHB10500 Parametric

Parameter Name	Attribute value
polarity	10500
Maximum recurrent peak reverse voltage	200-600
IFSM(KA)	70
VFM(V)	1.01
IFM(A)	8000
F(KN)	38
Storage Temperature Range	175
OUTLINE	ZTB56

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Welding Diodes

Features

●

Super small volume,large current.

Ultra-thin silicon wafe manufacturing,protectiontt

technology.

Thin

ceramic package or encapsulation without ceramic package.

Special multilayer metal ohmic contact.

High-power avalanche featues.

Large surge current test.

●

Can be directly connected in parallel with ultra-low threshold voltage

VFO,low slope resistor R

Rthjc Low junction case thermal resistance Rthjc.

Used for reduced volume and greatil increase current.

●

Ceramic package

F(AV)

@Tc

Type

=85℃

ZHA7100

ZHA12000

ZHA16000

7100

12000

16000

VRRM

200~600

FSM

&10ms

120

=25℃

1.05

1.02

1.09

5000

8000

12000

0.74

0.75

mΩ

0.025

0.019

0.017

Qrr

℃

175

Rth(j-c)

K/W

0.010

0.006

0.004

F±10%

ZTA50

ZTA63

ZTA76

Outline

μC

≤400

Pressure package without case

F(AV)

@Tc

Type

=85℃

ZHA9200

ZHA10500

ZHA13500

ZHA18000

9200

10500

13500

18000

200~600

VRRM

FSM

&10ms

135

=25℃

1.03

1.01

0.97

1.09

2=8000

8000

10000

12000

0.78

0.81

0.76

0.78

mΩ

0.031

0.026

0.021

0.018

Qrr

℃

175

Rth(j-c)

K/W

0.0056

0.005

0.004

0.003

F±10%

Outline

ZTA53

ZTA56

ZTA63

ZTA75

μC

≤300

Revision:20190101-P1

www.lgesemi

mail:lge@lgesemi.com

ZHB10500 Related Products

	ZHB10500	C288P330NF10%200V	ZHA16000	1104LCMB080GTN38F0	ZHB18000	ZHB9200	ZHA7100
Description	No description yet	CAPACITOR, CERAMIC, MULTILAYER, 200V, 0.33uF, SURFACE MOUNT, CHIP	No description yet	CAP,AL2O3,100MF,16VDC,20% -TOL,20% +TOL	No description yet	High density diode, 9200Av, 200-600V, 60KA, 1.03V, 8000A, 33KN, 175℃	High Density Diode, 7100Av, 200-600V, 55KA, 1.05V, 5000A, 30KN, 175℃
polarity	10500	-	16000	POLARIZED	18000	9200	7100
Maximum recurrent peak reverse voltage	200-600	-	200-600	-	200-600	200-600	200-600
IFSM(KA)	70	-	120	-	135	60	55
VFM(V)	1.01	-	1.09	-	1.09	1.03	1.05
IFM(A)	8000	-	12000	-	12000	8000	5000
F(KN)	38	-	70	-	70	33	30
Storage Temperature Range	175	-	175	-	175	175	175
OUTLINE	ZTB56	-	ZTA76	-	ZTB75	ZTB53	ZTA50

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