ZHA16000 datasheet, PDF - EEWORLD Datasheet

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ZHA16000: DescriptionNo description yet; CategoryDiscrete semiconductor High density diode; File Size2MB，1 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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ZHA16000 Overview

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ZHA16000 Parametric

Parameter Name	Attribute value
polarity	16000
Maximum recurrent peak reverse voltage	200-600
IFSM(KA)	120
VFM(V)	1.09
IFM(A)	12000
F(KN)	70
Storage Temperature Range	175
OUTLINE	ZTA76

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Welding Diodes

Features

●

Super small volume,large current.

Ultra-thin silicon wafe manufacturing,protectiontt

technology.

Thin

ceramic package or encapsulation without ceramic package.

Special multilayer metal ohmic contact.

High-power avalanche featues.

Large surge current test.

●

R

F

Can be directly connected in parallel with ultra-low threshold voltage

VFO,low slope resistor R

F.

Rthjc Low junction case thermal resistance Rthjc.

Used for reduced volume and greatil increase current.

●

Ceramic package

I

F(AV)

@Tc

Type

=85℃

A

ZHA7100

ZHA12000

ZHA16000

7100

12000

16000

VRRM

V

200~600

I

FSM

@T

jm

&10ms

kA

50

85

120

V

FM

@I

FM

&T

C

=25℃

V

1.05

1.02

1.09

A

5000

8000

12000

V

FO

@T

jm

V

0.74

0.75

r

F

@T

jm

mΩ

0.025

0.019

0.017

Qrr

T

jm

℃

175

Rth(j-c)

K/W

0.010

0.006

0.004

F±10%

KN

30

50

70

ZTA50

ZTA63

ZTA76

Outline

μC

≤400

Pressure package without case

I

F(AV)

@Tc

Type

=85℃

A

ZHA9200

ZHA10500

ZHA13500

ZHA18000

9200

10500

13500

18000

V

200~600

VRRM

I

FSM

@T

jm

&10ms

kA

60

70

85

135

V

FM

@I

FM

&T

C

=25℃

V

1.03

1.01

0.97

1.09

A

2=8000

8000

10000

12000

V

FO

@T

jm

V

0.78

0.81

0.76

0.78

r

F

@T

jm

mΩ

0.031

0.026

0.021

0.018

Qrr

T

jm

℃

175

Rth(j-c)

K/W

0.0056

0.005

0.004

0.003

F±10%

Outline

KN

33

38

50

70

ZTA53

ZTA56

ZTA63

ZTA75

μC

≤300

Revision:20190101-P1

ht

t

p

:

//

www.lgesemi

.c

o

m

mail:lge@lgesemi.com

ZHA16000 Related Products

	ZHA16000	ZHB10500	C288P330NF10%200V	1104LCMB080GTN38F0	ZHB18000	ZHB9200	ZHA7100
Description	No description yet	No description yet	CAPACITOR, CERAMIC, MULTILAYER, 200V, 0.33uF, SURFACE MOUNT, CHIP	CAP,AL2O3,100MF,16VDC,20% -TOL,20% +TOL	No description yet	High density diode, 9200Av, 200-600V, 60KA, 1.03V, 8000A, 33KN, 175℃	High Density Diode, 7100Av, 200-600V, 55KA, 1.05V, 5000A, 30KN, 175℃
polarity	16000	10500	-	POLARIZED	18000	9200	7100
Maximum recurrent peak reverse voltage	200-600	200-600	-	-	200-600	200-600	200-600
IFSM(KA)	120	70	-	-	135	60	55
VFM(V)	1.09	1.01	-	-	1.09	1.03	1.05
IFM(A)	12000	8000	-	-	12000	8000	5000
F(KN)	70	38	-	-	70	33	30
Storage Temperature Range	175	175	-	-	175	175	175
OUTLINE	ZTA76	ZTB56	-	-	ZTB75	ZTB53	ZTA50

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