|
JANS1N5807US |
JANS1N5809US |
| Description |
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 |
| Is it lead-free? |
Contains lead |
Contains lead |
| Is it Rohs certified? |
incompatible |
incompatible |
| Parts packaging code |
MELF |
MELF |
| package instruction |
O-LELF-R2 |
O-LELF-R2 |
| Contacts |
2 |
2 |
| Reach Compliance Code |
compliant |
compli |
| Other features |
HIGH RELIABILITY, METALLURGICALLY BONDED |
HIGH RELIABILITY, METALLURGICALLY BONDED |
| application |
ULTRA FAST RECOVERY |
ULTRA FAST RECOVERY |
| Shell connection |
ISOLATED |
ISOLATED |
| Configuration |
SINGLE |
SINGLE |
| Diode component materials |
SILICON |
SILICON |
| Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
| JESD-30 code |
O-LELF-R2 |
O-LELF-R2 |
| JESD-609 code |
e0 |
e0 |
| Maximum non-repetitive peak forward current |
125 A |
125 A |
| Number of components |
1 |
1 |
| Phase |
1 |
1 |
| Number of terminals |
2 |
2 |
| Maximum operating temperature |
175 °C |
175 °C |
| Minimum operating temperature |
-65 °C |
-65 °C |
| Maximum output current |
3 A |
3 A |
| Package body material |
GLASS |
GLASS |
| Package shape |
ROUND |
ROUND |
| Package form |
LONG FORM |
LONG FORM |
| Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
| Maximum power dissipation |
5 W |
5 W |
| Certification status |
Qualified |
Qualified |
| Guideline |
MIL-19500 |
MIL-19500 |
| Maximum repetitive peak reverse voltage |
50 V |
100 V |
| Maximum reverse recovery time |
0.03 µs |
0.03 µs |
| surface mount |
YES |
YES |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Terminal form |
WRAP AROUND |
WRAP AROUND |
| Terminal location |
END |
END |
| Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
| Base Number Matches |
1 |
1 |
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