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JANS1N5809US

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2
CategoryDiscrete semiconductor    diode   
File Size60KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANS1N5809US Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2

JANS1N5809US Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY, METALLURGICALLY BONDED
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee0
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation5 W
Certification statusQualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.03 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

JANS1N5809US Related Products

JANS1N5809US JANS1N5807US
Description Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Parts packaging code MELF MELF
package instruction O-LELF-R2 O-LELF-R2
Contacts 2 2
Reach Compliance Code compli compliant
Other features HIGH RELIABILITY, METALLURGICALLY BONDED HIGH RELIABILITY, METALLURGICALLY BONDED
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LELF-R2 O-LELF-R2
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 125 A 125 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 3 A 3 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 5 W 5 W
Certification status Qualified Qualified
Guideline MIL-19500 MIL-19500
Maximum repetitive peak reverse voltage 100 V 50 V
Maximum reverse recovery time 0.03 µs 0.03 µs
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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