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1N5919AP

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size796KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

1N5919AP Overview

Zener Diode,

1N5919AP Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
Is SamacsysN
Diode typeZENER DIODE
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
ZENER DIODES
1N5913B - - - 1N5956B
POWER DISSIPATION: 1.5W
Silicon planar power zener diodes
No suffix indicates a
±
20% tolerance on nominal Vz.
Suffix "A" denotes a
±10%,Suffix
"B" denotes a
±
5%,
Suffix "C" denotes a
±
2%,Suffix "D" denotes a
±
1%.
DO- 41
MECHANICAL DATA
Case:DO-41
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight:0.012ounces,0.34
grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SYMBOL
Zener current (see Table "Characteristics")
VALUE
UNIT
Pow er dissipation at T
amb
=25
P
tot
T
J
T
STG
1.5
1)
150
-55---+150
W
Junction temperature
Storage temperature
range
SYMBOL
Thermal resistance junction to
lead
MIN
TYP
MAX
45
1)
1.2
UNIT
/W
R
θ
JL
V
F
Forw ard voltage at I
F
=200mA
V
www.galaxycn.com
NOTES:
(1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Document Number 0284024
BL
GALAXY ELECTRICAL
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