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1N5709B

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 82pF C(T), 65V, Silicon, Abrupt, DO-14,
CategoryDiscrete semiconductor    diode   
File Size62KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N5709B Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 82pF C(T), 65V, Silicon, Abrupt, DO-14,

1N5709B Parametric

Parameter NameAttribute value
MakerAPI Technologies
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresSUPER Q
Minimum breakdown voltage65 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio3.2
Nominal diode capacitance82 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-14
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
minimum quality factor150
Maximum repetitive peak reverse voltage60 V
Maximum reverse current0.02 µA
Reverse test voltage60 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
Base Number Matches1
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