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1N645UR-1E3

Description
Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size57KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

1N645UR-1E3 Overview

Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2

1N645UR-1E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-LELF-R2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum output current0.4 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
GuidelineMIL
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
F
EATURES
1N645UR-1
1N645UR-1
AVAILABLE IN
JAN, JANTX, AND JANTXV
PER MIL-PRF-
19500/240
S
ILICON
R
ECTIFIER
M
ETALLURGICALLY
B
ONDED
H
ERMETICALLY
S
EALED
D
OUBLE
P
LUG
C
ONSTRUCTION
A
LSO
A
VAILABLE
A
S
LL645, CDLL645,
&
MLL645
M
AXIMUM
R
ATINGS AT
25
°C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 8.3mS:
Total Power Dissipation:
Operating Current:
-65°C to +175°C
-65°C to +175°C
5.0A
500mW
400mA, T
A
= +25°C
Operating Current:
Derating Factor:
Derating Factor:
D.C. Reverse Voltage (VRWM):
150mA, T
A
= +150°C
2mA/°C above +25°C
6mA/°C above +150°C
225V
DC E
LECTRICAL
C
HARACTERISTICS
V
F
Ambient
(°C)
I
F
mA
Min
V
Max
V
Ambient
(°C)
I
R
V
R
V (dc)
Min
µA
Max
µA
D
ESIGN
D
ATA
Case:
Hermetically sealed glass package per MIL-
PRF-19500/240 DO-213AA outline
Lead Material:
Copper clad steel
Lead Finish:
Tin/Lead
Thermal Resistance (R
θJEC
):
100°C/W maximum
Thermal Impedance (Z
θJX
):
35°C/W maximum
Marking:
Blue body coat
Polarity:
Cathode end is banded
25
150
-55
400
400
400
0.80
0.70
-
1.00
0.95
1.20
25
25
150
225
270(ac)
225
-
-
-
0.050
50
25
AC E
LECTRICAL
C
HARACTERISTICS AT
25°C
Symbol
Capacitance
@ V
R
= 4V
pF
Min
-
Max
20
I
RELAND -
G
ORT
R
OAD
,
E
NNIS,
C
O.
C
LARE
PHONE:
TOLL FREE:
FAX:
+353 65 6840044
+186 62 702434
+353 65 6822298
WWW.MICROSEMI.COM
U.S.A. D
OMESTIC
S
ALES
C
ONTACT
PHONE:
TOLL FREE:
(617) 926 0404
1 800 666 2999

1N645UR-1E3 Related Products

1N645UR-1E3 4640-1032-S P2010K2701JGW
Description Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2 3/8 HEX MALE FEMALE STANDOFFS Fixed Resistor, Thin Film, 1W, 2700ohm, 300V, 5% +/-Tol, 100ppm/Cel, Surface Mount, 2010, CHIP
package instruction O-LELF-R2 - CHIP
Reach Compliance Code compliant - compliant
ECCN code EAR99 - EAR99
Other features METALLURGICALLY BONDED - ANTI-SULFUR, HIGH PRECISION
Number of terminals 2 - 2
Package form LONG FORM - SMT
surface mount YES - YES
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