2SD1766 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> Bipolar transistor> 2SD1766

Preview

2SD1766: DescriptionNo description yet; CategoryDiscrete semiconductor Bipolar transistor; File Size695KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

Download Datasheet Parametric View All

2SD1766 Overview

No description yet

2SD1766 Parametric

Parameter Name	Attribute value
polarity	NPN
Collector-emitter breakdown voltage	32
Collector Current - Continuous	2
DC current gain - Min	82
DC current gain - Max	390
Transition frequency	100
Package	SOT-89
Storage Temperature Range	-55-150
class	Transistors

Preview

Download Datasheet

View All

2SD1766

SOT-89 Transistor(NPN)

1.

BASE

1

2

3

3.

EMITTER

2.

COLLECTOR

1.6

1.4

SOT-89

4.6

4.4

1.8

1.4

B

Features

Low V

CE(sat)

.V

CE(sat)

=0.16V(Typ.)(I

C

/I

B

=2A/0.2A)

Complements to 2SB1188

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

stg

Parameter

Collector-Base

Voltage

Value

40

32

5

2

500

150

-55-150

Units

V

A

mW

℃

0.8

MIN

2.6 4.25

2.4 3.75

0.44

0.37

0.13

B

0.53

0.48 0.40

2x)

0.35

1.5

3.0

Dimensions in inches and (millimeters)

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector dissipation

Junction Temperature

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE(1)

V

CE(sat)

f

T

C

ob

Test

I

C

=50μA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=50μA, I

C

=0

V

CB

=20V, I

E

=0

V

EB

=4V, I

C

=0

V

CE

=3V, I

C

=500mA

I

C

=2A, I

B

=0.2A

V

CE

=5V, I

C

=50mA, f=100MHz

V

CB

=10V, I

E

=0, f=1MHz

100

30

82

conditions

MIN

40

32

5

1

390

0.8

V

MHz

pF

TYP

MAX

UNIT

V

μA

CLASSIFICATION OF

Rank

Range

Marking

h

FE(1)

P

82-180

DBP

Q

120-270

DBQ

R

180-390

DBR

Revision:20170701-P1

ht

t

p

:

//

www.lgesem i

.c

o

m

mail:lge@lgesemi.com

Recommended Resources

Fast response circuit with contact control

Zero drift circuit

Constant current timing charger circuit diagram using NE555

RS232C serial communication interface circuit

MB3730 power amplifier circuit

Square computer automatic rice cooker circuit 2

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components