LT10A03-T datasheet, PDF - EEWORLD Datasheet

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LT10A03-T: DescriptionRectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, PLASTIC, R-6, 2 PIN; CategoryDiscrete semiconductor diode; File Size57KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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LT10A03-T Overview

Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, PLASTIC, R-6, 2 PIN

LT10A03-T Parametric

Parameter Name	Attribute value
Maker	Diodes
package instruction	PLASTIC, R-6, 2 PIN
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	600 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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LT10A01 - LT10A07

10A RECTIFIER

Features

Diffused Junction

High Current Capability and Low Forward

Voltage Drop

Surge Overload Rating to 600A Peak

Low Reverse Leakage Current

Plastic Material - UL Flammability

Classification 94V-0

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 2.1 grams (approx)

Mounting Position: Any

Marking: Type Number

Dim

R-6

Min

25.40

8.60

1.20

8.60

Max

—

9.10

1.30

9.10

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

@ T

= 50°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

Forward Voltage

10Peak Reverse Current

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

@ I

= 10A

= 25°C

@ T

= 100°C

Symbol 10A01

RRM

RWM

R(RMS)

FSM

qJA

STG

@ T

= 25°C unless otherwise specified

10A02

100

10A03

200

140

10A04

400

280

600

1.0

100

10A05

600

420

10A06

800

560

10A07

1000

700

Unit

µA

150

-65 to +150

K/W

°C

Notes:

1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

DS28010 Rev. A-2

1 of 2

LT10A01-LT10A07

LT10A03-T Related Products

	LT10A03-T	LT10A01-T	LT10A02-T	LT10A04-T	LT10A05-T	LT10A07-T
Description	Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, PLASTIC, R-6, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, PLASTIC, R-6, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, PLASTIC, R-6, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 10A, 400V V(RRM), Silicon, PLASTIC, R-6, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, PLASTIC, R-6, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 10A, 1000V V(RRM), Silicon, PLASTIC, R-6, 2 PIN
Maker	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes
package instruction	PLASTIC, R-6, 2 PIN	PLASTIC, R-6, 2 PIN	PLASTIC, R-6, 2 PIN	O-PALF-W2	PLASTIC, R-6, 2 PIN	PLASTIC, R-6, 2 PIN
Contacts	2	2	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N	N	N
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V	1 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	600 A	600 A	600 A	600 A	600 A	600 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	10 A	10 A	10 A	10 A	10 A	10 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	50 V	100 V	400 V	600 V	1000 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1	1	1

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