NTHD3101F
Power MOSFET and
Schottky Diode
Features
−20
V, FETKYt, P−Channel,
−4.4
A, with
4.1 A Schottky Barrier Diode, ChipFETt
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MOSFET
V
(BR)DSS
−20
V
R
DS(on)
TYP
64 mW @
−4.5
V
85 mW @
−2.5
V
I
D
MAX
−4.4
A
•
•
•
•
•
•
•
•
•
•
•
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP−6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Independent Pinout to each Device to Ease Circuit Design
Trench P−Channel for Low On Resistance
Ultra Low V
F
Schottky
Pb−Free Packages are Available
Li−Ion Battery Charging
High Side DC−DC Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered Products
SCHOTTKY DIODE
V
R
MAX
20 V
S
V
F
TYP
0.510 V
A
I
F
MAX
4.1 A
Applications
MOSFET MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
t
≤
5s
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
P
D
T
J
= 25°C
I
DM
T
J
, T
STG
I
S
T
L
Symbol
V
DSS
V
GS
I
D
Value
−20
±8.0
−3.2
−2.3
−4.4
1.1
2.1
−13
−55
to
150
2.5
260
A
°C
A
°C
W
Units
V
V
A
G
D
P−Channel MOSFET
C
Schottky Diode
8
1
ChipFET
CASE 1206A
STYLE 3
t
p
= 10
ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
PIN
CONNECTIONS
1
8
MARKING
DIAGRAM
1
2
3
4
D1 M
G
8
7
6
5
A
A
S
3
2
7
6
C
C
D
D
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Forward Current
Steady
State
t
≤
5s
T
J
= 25°C
4.1
A
Symbol
V
RRM
V
R
I
F
Value
20
20
2.2
Units
V
V
V
G
4
5
D1 = Specific Device Code
M = Month Code
G
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2008
November, 2008
−
Rev. 4
1
Publication Order Number:
NTHD3101F/D
NTHD3101F
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient – t
≤
10 s (Note 2)
Symbol
R
qJA
R
qJA
Max
113
60
Units
°C/W
°C/W
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
Drain−to−Source On−Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
=
−4.5,
I
D
=
−3.2
A
V
GS
=
−2.5,
I
D
=
−2.2
A
V
GS
=
−1.8,
I
D
=
−1.0
A
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
Symbol
V
F
I
R
Test Conditions
I
F
= 0.1 A
I
F
= 1.0 A
V
R
= 10 V
V
R
= 20 V
Min
V
GS
= 0 V, I
S
=
−1.0
A ,
dI
S
/dt = 100 A/ms
V
GS
= 0 V, I
S
=
−2.5
A
T
J
= 25°C
V
GS
=
−4.5
V, V
DD
=
−10
V,
I
D
=
−3.2
A, R
G
= 2.4
W
5.8
11.7
16
12.4
−0.8
13.5
9.5
4.0
6.5
nC
−1.2
V
ns
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
=
−4.5
V, V
DS
=
−10
V,
I
D
=
−3.2
A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
−10
V
680
100
70
7.4
0.6
1.4
2.5
nC
pF
g
FS
V
DS
=
−10
V, I
D
=
−2.9
A
V
GS
= V
DS
, I
D
=
−250
mA
−0.45
2.7
64
85
120
8.0
80
110
170
S
−1.5
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
DS
=
−16
V, V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
=
−250
mA
−20
−15
−1.0
−5.0
±100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Units
V
DS
= 0 V, V
GS
=
±8.0
V
DRAIN−SOURCE DIODE CHARACTERISTICS
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Maximum Instantaneous
Forward Voltage
Maximum Instantaneous
Reverse Current
Typ
0.425
0.510
0.575
1.0
5.0
mA
Max
Units
V
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTHD3101F
TYPICAL P−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
9
−I
D,
DRAIN CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
−1.8
V
−1.6
V
−1.4
V
7
8
9
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
=
−5
V to
−3.6
V
V
GS
=
−3
V
−2.6
V
T
J
= 25°C
−2.4
V
−I
D,
DRAIN CURRENT (AMPS)
9
8
7
6
5
4
3
2
1
0
0
T
C
=
−55°C
25°C
100°C
3.5
V
DS
≥
−10
V
−2.2
V
−2
V
1
3
0.5
1.5
2
2.5
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.2
0.2
Figure 2. Transfer Characteristics
0.175
0.15
I
D
=
−3.2
A
T
J
= 25°C
T
J
= 25°C
0.175
0.15
V
GS
=
−2.5
V
0.125
0.1
0.125
0.1
V
GS
=
−4.5
V
0.075
0.05
1
3
5
2
4
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
0.075
0.05
2
3
4
5
6
7
8
−I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.4
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.3
1.2
1.1
1
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
I
D
=
−3.2
A
V
GS
=
−4.5
V
−I
DSS
, LEAKAGE (nA)
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 100°C
100
2
4
6
8
10
12
14
16
18
20
−T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTHD3101F
TYPICAL P−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
V
GS
= 0 V
C
ISS
T
J
= 25°C
Q
T
4
−V
DS
3
2
1
0
I
D
=
−3.2
A
T
J
= 25°C
0
2
4
6
8
Q
GS
Q
GD
−V
GS
8
6
4
2
0
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (V)
−V
GS,
GATE−TO−SOURCE VOLTAGE (V)
1500
1200
900
V
DS
= 0 V
600
300
C
OSS
0
5
−V
GS
0
−V
DS
5
10
15
20
C
RSS
5
10
C, CAPACITANCE (pF)
Q
g
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
−I
S
, SOURCE CURRENT (AMPS)
V
DS
=
−10
V
I
D
=
−3.2
A
V
GS
=
−4.5
V
100
t, TIME (ns)
t
d(off)
t
f
t
r
10
t
d(on)
5
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
4
3
2
1
0
0.3
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.6
0.9
1.2
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTHD3101F
TYPICAL SCHOTTKY PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
1
T
J
= 150°C
1
T
J
= 150°C
T
J
= 25°C
T
J
=
−55°C
0.40
0.60
0.80
T
J
= 25°C
0.40
0.60
0.80
0.1
0.20
0.1
0.20
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 11. Typical Forward Voltage
1E−3
I
R,
REVERSE CURRENT (AMPS)
100E−6
T
J
= 100°C
10E−6
1E−6
I
R,
MAXIMUM REVERSE CURRENT (AMPS)
T
J
= 150°C
10E+0
1E+0
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 12. Maximum Forward Voltage
T
J
= 150°C
T
J
= 100°C
100E−3
10E−3
1E−3
100E−9
10E−9
0
T
J
= 25°C
T
J
= 25°C
0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
100E−6
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
Figure 13. Typical Reverse Current
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
Figure 14. Maximum Reverse Current
I
O,
AVERAGE FORWARD CURRENT (AMPS)
3.5
freq = 20 kHz
3
2.5
2
1.5
1
0.5
0
25
45
dc
square wave
Ipk/Io =
p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
Ipk/Io =
p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
square wave
dc
65
85
105
125
145
165
T
L
, LEAD TEMPERATURE (°C)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 15. Current Derating
Figure 16. Forward Power Dissipation
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