NTD25P03LRL datasheet, PDF - EEWORLD Datasheet

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NTD25P03LRL: Description25 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size104KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTD25P03LRL Overview

25 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET

NTD25P03LRL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
package instruction	CASE 369C-01, DPAK-3
Contacts	3
Manufacturer packaging code	CASE 369C-01
Reach Compliance Code	_compli
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	25 A
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	75 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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NTD25P03L, STD25P03L

Power MOSFET

−25 A, −30 V, Logic Level P−Channel DPAK

Designed for low voltage, high speed switching applications and to

withstand high energy in the avalanche and commutation modes.

The source−to−drain diode recovery time is comparable to a discrete

fast recovery diode.

Features

(BR)DSS

−30 V

http://onsemi.com

DS(on)

Typ

51 mW @ 5.0 V

Max

−25 A

•

S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•

These Devices are Pb−Free and are RoHS Compliant

Typical Applications

P−Channel

1 2

Value

−30

±15

±20

−25

−75

−55 to

+150

200

Unit

Vpk

Apk

°C

DPAK

CASE 369C

STYLE 2

•

PWM Motor Controls

Power Supplies

Converters

Bridge Circuits

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

− Continuous

− Non−Repetitive (tp

≤

10 ms)

Drain Current

− Continuous @ T

= 25°C

− Single Pulse (t

≤

ms)

Total Power Dissipation @ T

= 25°C

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= 25°C

= 25 Vdc, V

= 5.0 Vdc,

Peak I

= 20 Apk, L = 1.0 mH, R

= 25

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, (1/8 in from case for 10 seconds)

Symbol

DSS

GSM

, T

stg

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

AYWW

25P

03LG

Drain

Gate

Source

25P03L

= Assembly Location*

= Year

= Work Week

= Device Code

= Pb−Free Package

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

°C/W

qJC

qJA

1.65

120

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using the minimum recommended

pad size.

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

Semiconductor Components Industries, LLC, 2014

September, 2014 − Rev. 5

Publication Order Number:

NTD25P03L/D

NTD25P03LRL Related Products

	NTD25P03LRL	NTD25P03L_06
Description	25 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET	25 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET
Shell connection	DRAIN	DRAIN
Number of components	1	1
Number of terminals	2	2
surface mount	YES	Yes
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	single
transistor applications	SWITCHING	switch
Transistor component materials	SILICON	silicon

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