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1N4005GPT26R

Description
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41
CategoryDiscrete semiconductor    diode   
File Size39KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

1N4005GPT26R Overview

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41

1N4005GPT26R Parametric

Parameter NameAttribute value
MakerFairchild
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum power dissipation3 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N4001GP-1N4007GP
1N4001GP - 1N4007GP
Features
Low forward voltage drop.
High surge current capability.
High reliability.
High current capability.
DO-41
COLOR BAND DENOTES CATHODE
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
4001GP
4002GP
4003G
Value
4004GP
4005GP
4006GP
4007GP
Units
600
800
1000
V
A
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
100
200
400
1.0
30
-65 to +175
-65 to +175
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
3.0
50
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
4001GP
4002GP
4003G
Device
4004GP
4005GP
4006GP
4007GP
Units
V
µA
µA
pF
Forward Voltage @ 1.0 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
1.1
5.0
50
8.0
2001
Fairchild Semiconductor Corporation
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