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1SS119RY

Description
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34
CategoryDiscrete semiconductor    diode   
File Size74KB,2 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

1SS119RY Overview

Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34

1SS119RY Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current1 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum reverse current0.1 µA
Maximum reverse recovery time0.0035 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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