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U1ZB330-XTE12L

Description
DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size87KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

U1ZB330-XTE12L Overview

DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

U1ZB330-XTE12L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum breakdown voltage330 V
Minimum breakdown voltage310 V
Breakdown voltage nominal value320 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum reverse current10 µA
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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