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1N5806US

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size108KB,1 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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1N5806US Overview

Rectifier Diode,

1N5806US Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionSMA, 2 PIN
Reach Compliance Codecompliant
Is SamacsysN
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.025 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Certificate
:
TH97/10561QM
Certificate :
TW00/17276EM
1N5802US - 1N5806US
PRV : 50 - 150 Volts
Io : 2.5 Amperes
FEATURES :
*
*
*
*
*
*
*
*
Glass passivated junction chip
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ultrafast recovery time
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
ULTRA FAST RECTIFIERS
SMA (DO-214AC)
5.0
±
0.15
4.5
±
0.15
1.1
±
0.3
1.2
±
0.2
2.6
±
0.15
2.1
±
0.2
0.2
±
0.07
2.0
±
0.2
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMA Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.067 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100µA
Maximum Average Forward Current
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 1.0 A.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL 1N5802US 1N5803US 1N5804US 1N5805US 1N5806US UNIT
V
RWM
V
BR(Min)
I
F(AV)
50
55
75
80
100
110
1.0 (Ta = 55 °C)
35
0.875
1.0
50 (Ta = 100 °C)
25
- 65 to + 175
- 65 to + 175
125
135
150
160
V
V
A
2.5 (T
L
= 75 °C, Note 1)
I
FSM
V
F
I
R
I
R(H)
Trr
T
J
T
STG
A
V
μA
ns
°C
°C
Notes :
(1) I
F(AV)
= 2.5A @ T
L
=75°C. Derate at 25mA/°C for T
L
above 125°C.
(2) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
Page 1 of 1
Rev. 01 : July 16, 2007

1N5806US Related Products

1N5806US 2225B182K202EM
Description Rectifier Diode, Ceramic Capacitor, Ceramic, 2000V, 10% +Tol, 10% -Tol, X7R, -/+15ppm/Cel TC, 0.0018uF, 2225,
Is it Rohs certified? conform to incompatible
package instruction SMA, 2 PIN , 2225
Reach Compliance Code compliant not_compliant
Number of terminals 2 2
Maximum operating temperature 175 °C 125 °C
Minimum operating temperature -65 °C -55 °C
Package form SMALL OUTLINE SMT

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