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1N249B

Description
20A, 100V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size36KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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1N249B Overview

20A, 100V, SILICON, RECTIFIER DIODE

1N249B Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
Is SamacsysN
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current450 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current20 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum power dissipation25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5000 µA
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
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