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1N3172RIL

Description
Rectifier Diode, 1 Element, 300A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size120KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N3172RIL Overview

Rectifier Diode, 1 Element, 300A, 800V V(RRM),

1N3172RIL Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.55 V
Maximum non-repetitive peak forward current5000 A
Number of components1
Maximum operating temperature200 °C
Maximum output current300 A
Maximum repetitive peak reverse voltage800 V
Base Number Matches1

1N3172RIL Related Products

1N3172RIL 40HS34B122JC 1210F2000223KRT 1N3164IL 1N3170IL
Description Rectifier Diode, 1 Element, 300A, 800V V(RRM), Ceramic Capacitor, Multilayer, Ceramic, 4000V, 5% +Tol, 5% -Tol, X7R, 15% TC, 0.0012uF, Through Hole Mount, RADIAL LEADED Ceramic Capacitor, Multilayer, Ceramic, 200V, 10% +Tol, 10% -Tol, BZ, 15% TC, 0.022uF, Surface Mount, 1210, CHIP, ROHS COMPLIANT Rectifier Diode, 1 Element, 300A, 200V V(RRM) Rectifier Diode, 1 Element, 300A, 600V V(RRM),
Reach Compliance Code compliant compliant compliant compliant compliant
Maximum operating temperature 200 °C 125 °C 125 °C 200 °C 200 °C
Maker Microsemi - - Microsemi Microsemi
ECCN code EAR99 EAR99 EAR99 - EAR99
Configuration SINGLE - - SINGLE SINGLE
Diode type RECTIFIER DIODE - - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.55 V - - 1.55 V 1.55 V
Maximum non-repetitive peak forward current 5000 A - - 5000 A 5000 A
Number of components 1 - - 1 1
Maximum output current 300 A - - 300 A 300 A
Maximum repetitive peak reverse voltage 800 V - - 200 V 600 V

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