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Datasheet> All Categories > Discrete semiconductor> diode> 1N4496US
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1N4496US

Description
Zener Diode, 200V V(Z), 1.5W
CategoryDiscrete semiconductor    diode   
File Size203KB，3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
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1N4496US Overview

Zener Diode, 200V V(Z), 1.5W

1N4496US Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSENSITRON
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance1500 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation1.5 W
Nominal reference voltage200 V
surface mountYES
Terminal surfaceTIN LEAD
Maximum time at peak reflow temperatureNOT SPECIFIED
Working test current1.2 mA
Base Number Matches1

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Download Datasheet
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5080, Rev B.3
Zener 1.5W DIODE
Ultra-low reverse leakage current
Zener voltage available from 6.2V to 200V
Sharp Zener knee
Metallurgically bonded, hermetic, non-cavity glass package
Lead finish SN63
Operating Temperature: -65oC to +175oC.
Storage Temperature: -65oC to +200oC.
Power Dissipation: 1.5 Watts @ TA = 25oC
All parts are 100% hot solder dipped
JAN/ JANTX/ JANTXV available per MIL-PRF-19500/460
JANS Plus removes atypical/out of family V
F
1N4460/US, 1N4461/US,
1N4467/US thru 1N4496/US
Standard
ZENER DIODES
A
VAILABLE AS
1N
JAN, JANTX, JANTXV
JANS
JAN EQUIVALENT *
SJ44XX*, SX44XX*, SV44XX*
SS44XX*
Standard Recovery Rectifiers
Qualified per MIL-PRF-19500/406
Electrical characteristics – Temperature 25
o
C unless otherwise noted
Nominal
Zener
Voltage
Vz
V
1N4460/US
6.2
1N4461/US
6.8
1N4467/US
12.0
1N4468/US
13.0
1N4469/US
15.0
1N4470/US
16.0
1N4471/US
18.0
1N4472/US
20.0
1N4473/US
22.0
1N4474/US
24.0
1N4475/US
27.0
1N4476/US
30.0
1N4477/US
33.0
1N4478/US
36.0
1N4479/US
39.0
1N4480/US
43.0
1N4481/US
47.0
1N4482/US
51.0
1N4483/US
56.0
1N4484/US
62.0
1N4485/US
68.0
1N4486/US
75.0
1N4487/US
82.0
1N4488/US
91.0
1N4489/US
100.0
1N4490/US
110.0
1N4491/US
120.0
1N4492/US
130.0
1N4493/US
150.0
1N4494/US
160.0
1N4495/US
180.0
1N4496/US
200.0
o
*
Dc TA=+150 C IR2
Part Number
Test
current
I
ZT
mA
40
37
21.0
19.0
17.0
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.0
2.0
1.9
1.7
1.6
1.4
1.2
Max
Dynamic
Impedance
Z
ZK
@ I
ZK
Ω
4
2.5
7
8
9
10
11
12
14
16
18
20
25
27
30
40
50
60
70
80
100
130
160
200
250
300
400
500
700
1000
1300
1500
Max Knee
Impedance
I
ZK
@ I
ZK
Ω
200
200
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
mA
1
1
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
Max
Continuous
Current
I
ZM
mA
230
210
119
110
95
90
79
71
65
60
53
48
43
40
37
33
30
28
26
23
21
19
17
16
14
13
12
11
9.5
8.9
7.9
7.2
Max Surge
Current
I
ZSM
A
2.3
2.1
1.2
1.1
.95
.90
.79
.71
.65
.60
.53
.48
.43
.40
.37
.33
.30
.28
.26
.23
.21
.19
.17
.16
.14
.13
.12
.11
.095
.089
.079
.072
μA
10
5
.20
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
05
.05
.05
.05
.05
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
Maximum
Reverse
Current
I
R
@ V
R
V
3.72
4.08
9.60
10.40
12.00
12.80
14.40
16.00
17.60
19.20
21.60
24.00
26.40
28.80
31.20
34.40
37.60
40.80
44.80
49.60
54.40
60.40
65.60
72.80
80.00
88.00
96.00
104.00
120.00
128.00
144.00
160.00
*Sensitron space equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from
wafer fabrication through assembly and testing using our internal specification.
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com

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