MUN5211DW1,
NSBC114EDXV6,
NSBC114EDP6
Dual NPN Bias Resistor
Transistors
R1 = 10 kW, R2 = 10 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
www.onsemi.com
PIN CONNECTIONS
(2)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
R
2
(1)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B
1
7A MG
G
SOT−563
CASE 463A
1
7A M
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−963
CASE 527AD
M
1
ORDERING INFORMATION
Device
MUN5211DW1T1G,
SMUN5211DW1T1G*
NSVMUN5211DW1T2G*
NSVMUN5211DW1T3G*
NSBC114EDXV6T1G,
NSVBC114EDXV6T1G*
NSBC114EDXV6T5G
NSBC114EDP6T5G
Package
SOT−363
SOT−363
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
4,000 / Tape & Reel
8,000 / Tape & Reel
8,000 / Tape & Reel
7A/A
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
June, 2017
−
Rev. 5
1
Publication Order Number:
DTC114ED/D
A
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5211DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5211DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 1)
T
A
= 25°C
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
Junction and Storage Temperature Range
NSBC114EDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 1)
T
A
= 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 1)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBC114EDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 1)
T
A
= 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBC114EDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 4)
T
A
= 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
(Note 4)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBC114EDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 4)
T
A
= 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
1.
2.
3.
4.
5.
(Note 4)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/°C
°C/W
R
qJA
Junction and Storage Temperature Range
FR−4 @ Minimum Pad.
FR−4 @ 1.0
×
1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
www.onsemi.com
2
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 6)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 6)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 10 mA)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
35
−
−
−
−
4.9
7.0
0.8
60
−
1.2
2.0
−
−
10
1.0
−
0.25
−
−
0.2
−
13
1.2
V
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.5
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
3
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
TYPICAL CHARACTERISTICS
MUN5211DW1, NSBC114EDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
1000
V
CE
= 10 V
T
A
=
−25°C
75°C
h
FE
, DC CURRENT GAIN
25°C
0.1
25°C
T
A
= 75°C
−25°C
I
C
/I
B
= 10
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
3.6
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
10
T
A
= 75°C
−25°C
25°C
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
0.001
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
25°C
V
in
, INPUT VOLTAGE (V)
−25°C
T
A
= 75°C
1
V
O
= 0.2 V
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
www.onsemi.com
4
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
TYPICAL CHARACTERISTICS
NSBC114EDP6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
1000
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
150°C
100
25°C
0.1
25°C
150°C
−55°C
10
−55°C
0.01
0
10
20
30
40
50
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
vs. I
C
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
150°C
10
Figure 8. DC Current Gain
−55°C
25°C
1
0.1
V
O
= 5 V
0.01
0
1
2
3
4
5
6
7
V
R
, REVERSE VOLTAGE (V)
V
in
, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
100
Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
10
25°C
−55°C
1
150°C
0.1
V
O
= 0.2 V
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
www.onsemi.com
5
京公网安备 11010802033920号
EEWORLD
