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1N4615C-1E3

Description
Zener Diode, 2V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-35, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size286KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

1N4615C-1E3 Overview

Zener Diode, 2V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-35, 2 PIN

1N4615C-1E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance1250 Ω
JEDEC-95 codeDO-204AH
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.48 W
Certification statusNot Qualified
Nominal reference voltage2 V
surface mountNO
technologyZENER
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2%
Working test current0.25 mA
Base Number Matches1
1N4614-1 – 1N4627-1e3,
1N4099-1 – 1N4135-1e3
500 mW Metallurgically Bonded
Glass Zener Diodes
Qualified per MIL-PRF-19500/435
DESCRIPTION
The 1N4099-1 through 1N4135-1 and 1N4614-1 through 1N4627-1 series are 500 mW, Zener
voltage regulators in the axial-leaded, glass DO-35 package. Voltages from 1.8 to 100V in
5%, 2%, and 1% tolerances are available. They are constructed with an internal metallurgical
bond and are mil-qualified up to the JANS level for high reliability applications.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 1N4099 through 1N4135 and 1N4614 through 1N4627 series.
Internal metallurgical bond.
Max noise density 40 μV / √Hz for 6.8 V and up. Falls quickly to 1 μV / √Hz at lower voltages.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/435.
RoHS compliant versions available (commercial grade only).
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA package
(surface mount)
1N4099UR-1 – 1N4135UR-1
and
1N4614UR-1 – 1N4627UR-1
APPLICATIONS / BENEFITS
Flexible axial-lead mounting terminals.
Regulates voltage over broad ranges of current and temperature.
Extensive selection from 1.8 to 100 volts.
Voltage tolerances of 5% (standard), 2% and 1% are available.
Hermetically sealed surface mount package.
Non-sensitive to ESD per MIL-STD-750 method 1020.
Minimal capacitance (see
Figure 3).
Inherently radiation hard as described in Microsemi
MicroNote 050.
DO-216 package
(tabbed surface mount)
1PMT4099 – 1PMT4135 and
1PMT4614 – 1PMT4627
MAXIMUM RATINGS
@ T
C
= +25 ºC unless otherwise specified
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Lead @ 3/8 (10 mm)
lead length from body
(2)
Rated Average Power Dissipation
Forward Voltage @ 200 mA
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJL
P
M(AV)
V
F
Value
-65 to +175
300
250
0.5
1.1
260
Unit
C
o
C/W
o
C/W
W
V
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. When mounted on FR4 PC board (1 oz Cu) with 4 mm
2
copper pads and track width 1 mm, length 25
mm.
2. The 0.5 W should be linearly derated starting at T
L
= 50 °C and goes to zero at 175 °C. For ambient T
A
condition on a typical PC board, it linearly derates from 500 mW starting at 25 °C and goes to zero at
175 °C (see
Figure 2).
T4-LDS-0245-2, Rev. 1 (5/31/13)
©2013 Microsemi Corporation
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