Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Other features | HIGH RELIABILITY |
| Maximum collector current (IC) | 13 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Maximum landing time (tf) | 350 ns |
| Gate emitter threshold voltage maximum | 8.5 V |
| Gate-emitter maximum voltage | 20 V |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 50 W |
| Certification status | Not Qualified |
| Maximum rise time (tr) | 600 ns |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 300 ns |
| Nominal on time (ton) | 160 ns |
| Base Number Matches | 1 |
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