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1N4388

Description
Step Recovery Diode, Ultra High Frequency, Silicon, DO-4, DO-4, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size22KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

1N4388 Overview

Step Recovery Diode, Ultra High Frequency, Silicon, DO-4, DO-4, 1 PIN

1N4388 Parametric

Parameter NameAttribute value
Parts packaging codeDO-4
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresMULTIPLIER VARACTOR
Minimum breakdown voltage100 V
Shell connectionCATHODE
ConfigurationSINGLE
Maximum diode capacitance20 pF
Nominal diode capacitance20 pF
Diode component materialsSILICON
Diode typeSTEP RECOVERY DIODE
frequency bandULTRA HIGH FREQUENCY
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Number of components1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
minimum quality factor200
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
1N4388
SILICON MULTIPLIER VARACTOR DIODE
PACKAGE STYLE DO- 4
DESCRIPTION:
The
1N4388
is a High Power Silicon
Multiplier Varactor Diode
.
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
θ
JC
O
O
200 mA
100 V
10 W @ T
C
= 25 C
-65 C to +150 C
-65 C to +175 C
10 C/W
O
O
O
O
1 = Anode
2 = Cathode
CHARACTERISTICS
SYMBOL
V
BR
C
T
Q
f
in
P
out(X3)
P
IN
= 30 W
I
R
= 10
µA
V
R
= 6.0 V
V
R
= 6.0 V
T
C
= 25 C
O
TEST CONDITIONS
f = 1.0 MHz
f = 50 MHz
F
IN
= 150 MHz
MINIMUM
100
TYPICAL
MAXIMUM
20
UNITS
V
pF
---
800
500
15
20
MHz
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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