AP4502GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
D2
D2
D1
D1
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
S2
G1
G2
20V
18mΩ
8.3A
-20V
45mΩ
-5A
▼
Low Gate Charge
▼
Fast Switching Performance
P-CH BV
DSS
R
DS(ON)
I
D
SO-8
S1
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
D1
D2
The SO-8 package is widly preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
20
±12
8.3
6.5
30
2.0
0.016
-55 to 150
-55 to 150
Rating
N-channel
P-channel
-20
±12
-5
-4
-20
V
V
A
A
A
W
W/℃
℃
℃
Units
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
201009074-1/7
AP4502GM
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=8.3A
V
GS
=2.5V, I
D
=5.2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
8.3
-
-
-
22
3
9
11
13
30
14
1350
325
255
Max. Units
-
16
18
30
-
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=8.3A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=±12V
I
D
=8A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3Ω,V
GS
=5V
R
D
=10Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.8A, V
GS
=0V
I
S
=8A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
32
24
Max. Units
1.2
-
-
V
ns
nC
2/7
AP4502GM
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-5A
V
GS
=-2.5V, I
D
=-4A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Min.
-20
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
2.2
-
-
-
13
1.5
4.5
8
17
24
36
920
90
85
Max. Units
-
40
45
80
-
-
-1
-25
±100
-
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-2.2A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=±12V
I
D
=-5A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-5V
R
D
=10Ω
V
GS
=0V
V
DS
=-20V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1.8A, V
GS
=0V
I
S
=-5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
28
16
Max.
-1.2
-
-
30
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
AP4502GM
N-Channel
30
30
T
A
=25
℃
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
T
A
=150
℃
5.0V
4.5V
3.5V
2.5V
20
20
V
G
= 2.0 V
V
G
=2.0V
10
10
0
0
1
2
3
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
34
1.8
I
D
= 5.2A
30
T
A
= 25 C
o
I
D
=8.3A
V
G
=10V
R
DS(ON0
(m
Ω
)
26
Normalized R
DS(ON)
1.4
22
18
1.0
14
30
0.6
1
2
3
4
5
-50
0
-30
50
100
150
10
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
8
1.6
6
Normalized V
GS(th)
(V)
1.2
1.4
1.2
I
S
(A)
T
j
=150
o
C
4
T
j
=25
o
C
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4502GM
N-Channel
f=1.0MHz
12
10000
V
GS
, Gate to Source Voltage (V)
10
I
D
=8A
V
DS
= 10 V
8
1000
C
iss
C
oss
C
rss
6
C (pF)
100
10
4
2
0
0
10
20
30
40
50
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
100us
10
Normalized Thermal Response (R
thja
)
0.2
1ms
I
D
(A)
1
0.1
0.1
0.05
10ms
100ms
0.02
0.01
P
DM
0.01
t
T
Single Pulse
0.1
1s
T
A
=25
o
C
Single Pulse
DC
1
10
100
30
0.001
0.0001
0.001
0.01
0.1
-30
1
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
0.01
0.1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5/7
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