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BD135-16

Description
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size35KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
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BD135-16 Overview

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

BD135-16 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)13 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-126 (SOT-32) Plastic Package
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
BD135, BD137, BD139
BD135, 137, 139
NPN PLASTIC POWER TRANSISTORS
Complementary BD136, 138, 140
Medium Power Linear and Switching Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 0.5 A; I
B
= 0.05 A
D.C. current gain
I
C
= 0.15 A; V
CE
= 2 V
V
CBO
V
CEO
I
C
P
tot
T
j
V
CEsat
h
FE
max.
max.
max.
max.
max.
max.
min.
max.
135
45
45
137 139
60 100
60
80
1.5
12.5
150
0.5
40
250
137
60
60
5.0
139
100
80
V
V
A
W
°C
V
RATINGS (at T
A
=25 C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
V
CBO
Collector-emitter voltage (open base)
V
CEO
Emitter-base voltage (open collector)
V
EBO
135
max. 45
max. 45
max.
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3

BD135-16 Related Products

BD135-16 BD137-16 BD135-10 APL5155EBI-TRG BD139-10 BD137-6 BD135-6 BD139-6
Description Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
Is it lead-free? Contains lead Contains lead Contains lead - Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? conform to conform to conform to - conform to conform to conform to conform to
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compli compliant - compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED - -
Maximum collector current (IC) 1.5 A 1.5 A 1.5 A - 1.5 A 1.5 A - -
Collector-emitter maximum voltage 45 V 60 V 45 V - 80 V 60 V - -
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE - -
Minimum DC current gain (hFE) 40 40 40 - 40 40 - -
JEDEC-95 code TO-126 TO-126 TO-126 - TO-126 TO-126 - -
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 - -
Number of components 1 1 1 - 1 1 - -
Number of terminals 3 3 3 - 3 3 - -
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT - -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - -
Polarity/channel type NPN NPN NPN - NPN NPN - -
Maximum power dissipation(Abs) 13 W 13 W 13 W - 13 W 13 W - -
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified - -
surface mount NO NO NO - NO NO - -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE - -
Terminal location SINGLE SINGLE SINGLE - SINGLE SINGLE - -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - -
transistor applications SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING - -
Transistor component materials SILICON SILICON SILICON - SILICON SILICON - -
Nominal transition frequency (fT) 250 MHz 250 MHz 50 MHz - 250 MHz 250 MHz - -
Maker - - CDIL[Continental Device India Pvt. Ltd.] - CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
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