PD - 91685
IRG4PSH71U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
C
UltraFast Speed IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
= 2.50V
@V
GE
= 15V, I
C
= 50A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
SUPER - 247
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Max.
1200
99
50
200
200
±20
150
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
Ã
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
d
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
g
V
mJ
W
°C
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
–––
–––
–––
20 (2.0)
–––
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.36
–––
38
–––
Units
°C/W
N (kgf)
g (oz.)
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1
5/24/04
IRG4PSH71U
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
1200 —
—
V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
19
—
—
V V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
— 0.78 — V/°C V
GE
= 0V, I
C
= 1mA
I
C
= 70A
V
GE
= 15V
— 2.52 2.70
V
I
C
= 140A
V
CE(on)
See Fig.2, 5
Collector-to-Emitter Saturation Voltage
— 3.17 —
I
C
= 70A, T
J
= 150°C
— 2.68 —
V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
Gate Threshold Voltage
3.0
—
6.0
∆V
GE(th)
/∆T
J
Threshold Voltage temp. coefficient
—
-9.2
— mV/°C V
CE
= V
GE
, I
C
= 1.0mA
48
72
—
S V
CE
= 100V, I
C
= 70A
gfe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
—
—
500 µA V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 10V
—
—
2.0
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
—
— 5000
I
GES
Gate-to-Emitter Leakage Current
—
— ±100 nA V
GE
= ±20V
eÃ
Min. Typ. Max. Units
Conditions
f
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
TS
L
E
C
ies
C
oes
C
res
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
370 560
61
24
120
50
51
—
70
—
280 390
170 260
4.77 —
9.54 —
14.3 15.8
49
—
70
—
390
—
360
—
25
—
13
—
7280 —
290
—
50
—
Conditions
I
C
= 70A
See Fig.8
nC V
CC
= 400V
V
GE
= 15V
I
C
= 70A, V
CC
= 960V
ns V
GE
= 15V, R
G
= 5.0Ω
Energy losses include "tail"
See Fig. 9, 10, 11, 14
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 14
I
C
= 70A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0Ω
Energy losses include "tail"
ns
mJ
nH Measured 5mm from package
V
GE
= 0V
See Fig.7
pF V
CC
= 30V,
f = 1.0MHz
Notes:
Repetitive rating: V
GE
=20V; pulse width limited by maximum junction temperature (figure 20)
V
CC
=80%(V
CES
), V
GE
=20V, L=10µH, R
G
= 5.0
Ω
(figure 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximumjunction temperature.
2
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IRG4PSH71U
60
Triangular wave:
50
Clamp voltage:
80% of rated
Load Current ( A )
40
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 58W
30
Square wave:
20
60% of rated
voltage
10
Ideal diodes
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
1000
1000.0
IC , Collector-to Emitter Current (A)
100
IC, Collector-to-Emitter Current (A)
100.0
T J = 150°C
10
T J = 150°C
10.0
T J = 25°C
1
T J = 25°C
1.0
VGE= 15V
< 60µs PULSE WIDTH
0.1
0
1
2
3
4
5
VCC = 50V
< 60µs PULSE WIDTH
0.1
4
6
8
10
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PSH71U
100
4.0
VCE , Collector-to Emitter Voltage (V)
V GE = 15V
Maximum DC Collector Current (A)
80
VGE = 15V
380µs PULSE WIDTH
IC = 140A
3.5
60
3.0
40
IC = 70A
2.5
20
IC = 35A
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
τ
2
0.01
0.001
Ri (°C/W)
τi
(sec)
0.253
0.009159
0.1057
0.038041
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1E-005
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PSH71U
14000
12000
10000
VGE = 0V,
f = 1 MHZ
C ies = C ge + C gc , C ce
C res = C gc
C oes = C ce + Cgc
20
SHORTED
VGE, Gate-to-Emitter Voltage (V)
16
VCC = 400V
IC = 70A
C, Capacitance (pF)
Cies
8000
6000
12
Coes
4000
2000
0
1
10
100
1000
8
Cres
4
0
0
100
200
300
400
VCE, Collector-to-Emitter Voltage (V)
QG, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
25
1000
Total Switching Losses (mJ)
Switching Losses (mJ)
20
VGE = 15V
T J = 25°C
I C = 70A
V
CC = 960V
R G = 5.0
Ω
VGE = 15V
VCC = 960V
100
I C = 140A
I C = 70A
10
I C = 35A
15
10
0
10
20
30
40
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
RG, Gate Resistance (Ω)
T J, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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