27C1512T
512Kb (32K x 16-bit)
OTP EPROM MCM
Memory
Logic Diagram
F
EATURES
:
• 32K x 16 Bit OTP EPROM organization
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 Krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL
TH
LET: > 80 MeV/mg/cm
2
- SEU
TH
LET: > 80 Mev/mg/cm
2
• Package:
- 40 pin R
AD
-P
AK
® DIP
• Low power consumption:
- Active mode: 500 mW @ 10 MHz
- Standby mode: < 11 mW
• High speed page and word programming:
- Page programming time: 14 sec (typ)
• Programming power supply:
- V
PP
= 12.5 V ± 0.3 V
• One-time Programmable
• Pin Arrangement
- Flash memory and mask ROM compatible
D
ESCRIPTION
:
Maxwell Technologies’ 27C1512T high density 512K OneTime
Programmable Electrically Programmable Read Only Memory
multi-chip module (MCM) features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
27C1512T features fast address times and low power dissipa-
tion. The 27C1512T offers high speed programming using
page programming mode.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K.
01.06.05 REV 4
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
©2005 Maxwell Technologies
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
T
ABLE
1. 27C1512T P
INOUT
D
ESCRIPTION
P
IN
21-29, 31-36
19-12, 10-3
2
20
40
1
11, 30
39
37, 38
S
YMBOL
A0 - A14
I/O0 - I/O15
CE
OE
V
CC
V
PP
V
SS
PGM
NC
D
ESCRIPTION
Address
Input/Output
Chip Enable
Output Enable
Power Supply
Programming Supply
Ground
Programming Enable
No Connection
27C1512T
Memory
T
ABLE
2. 27C1512T A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage
1
Programming Voltage
1
All Input and Output Voltage
1,2
A9 Voltage
2
Weight
Thermal Impedance
Operating Temperature Range
Storage Temperature Range
1. Relative to V
SS
.
2. V
IN
, V
OUT
, and V
ID
min = -1.0V for pulse width < 20 ns.
S
YMBOL
V
CC
V
PP
V
IN
, V
OUT
V
ID
M
IN
-0.6
-0.6
-0.6
-0.6
--
-55
-65
M
AX
7.0
13.5
7.0
13.0
14.5
1.23
+125
+150
U
NIT
V
V
V
V
Grams
°C/W
°C
°C
Θ
JC
T
OPR
T
STG
T
ABLE
3. 27C1512T R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
Operating Temperature Range
S
YMBOL
V
CC
V
IL
V
IH
T
OPR
M
IN
4.5
-0.3
2.2
-55
M
AX
5.5
0.8
V
CC
+0.3
+125
U
NITS
V
V
°
C
01.06.05 REV 4
All data sheets are subject to change without notice
2
©2005 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
T
ABLE
4. 27C1512T C
APACITANCE
P
ARAMETER
Input Capacitance
Output Capacitance
1. V
IN
= V
OUT
= 0V.
2. T
A
= 25
o
C, f = 1 MHz.
3. Guaranteed by design.
S
YMBOL
C
IN
C
OUT
1,2, 3
27C1512T
M
IN
--
--
M
AX
10
15
U
NIT
pF
pF
T
ABLE
5. 27C1512T M
ODE
S
ELECTION 1,2
M
ODE
R
EAD
O
UTPUT
D
ISABLE
S
TANDBY
P
ROGRAM
P
ROGRAM
V
ERIFY
P
AGE
D
ATA
L
ATCH
P
AGE
P
ROGRAM
P
ROGRAM
I
NHIBIT
V
PP
V
CC
V
CC
V
CC
V
PP
V
PP
V
PP
V
PP
V
CC
V
PP
V
PP
V
PP
I
DENTIFIER
1. X = Don’t care.
2. 11.5V < V
H
< 12.5V.
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
CE
V
IL
V
IL
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
OE
V
IL
V
IH
X
V
IH
V
IL
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
PGM
V
IH
V
IH
X
V
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IL
V
IH
V
IH
A
9
X
X
X
X
X
X
X
X
X
X
X
V
H2
I/O
D
OUT
High-Z
High-Z
D
IN
D
OUT
D
IN
High-Z
High-Z
High-Z
High-Z
High-Z
ID
Memory
01.06.05 REV 4
All data sheets are subject to change without notice
3
©2005 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
27C1512T
T
ABLE
6. 27C1512T DC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION
(V
CC
= 5V ±10%, V
PP
= V
SS
, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
High
Low
Standby V
CC
Current
Operating V
CC
Current
T
EST
C
ONDITION
V
IN
= 5.5V
V
IN
@ 0V
V
OUT
= 5.5V
V
OUT
= 0.45V
CE = V
IH
I
OUT
= 0 mA, CE = V
IL
I
OUT
= 0 mA, f = 5 MHz
I
OUT
= 0 mA, f = 10 MHz
V
PP
= 5.5V
S
YMBOL
S
UBGROUPS
I
LI
I
LI
I
OH
I
OL
I
SB
I
CC1
I
CC2
I
CC3
I
PP1
V
IH1
V
IL1
I
OH
= -800 µ A
I
OL
= 4.2 mA
V
OH
V
OL
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
--
-4.0
--
--
--
--
--
2.2
--
2.4
--
--
60
60
100
1
--
--
--
--
M
IN
--
4
T
YP
--
--
--
4
--
2
--
--
--
40
--
0.8
--
0.45
mA
mA
M
AX
2
--
U
NIT
µA
µA
µA
V
PP
Current
Input Voltage
Output Voltage
µA
V
V
Memory
T
ABLE
7. 27C1512T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
(V
CC
= 5V + 10%, V
PP
= V
SS
, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Address Access Time
Chip Enable Access Time
Output Enable Access TIme
Output Hold to Address Change
Output Disable to High-Z
2
T
EST
C
ONDITION
CE = OE = V
IL
OE = V
IL
CE = V
IL
CE = OE = V
IL
CE = V
IL
S
YMBOL
t
ACC
t
CE
t
OE
t
OH
t
DF
S
UBGOUPS
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
M
IN
--
--
--
0
0
M
AX
200
200
70
--
50
U
NIT
ns
ns
ns
ns
ns
1. Test conditions:
- Input pulse levels
0.45V/2.4V
- Input rise and fall times
< 10 ns
- Output load
1 TTL gate + 100pF (including scope and jig)
- Referenced levels for measuring timing0.8V/2.0V
2. t
DF
is defined as the time at which the output becomes an open circuit and data is no longer driven.
T
ABLE
8. 27C1512T DC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATIONS 1,2,3,4
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= 25
°
C +5
°
C)
P
ARAMETER
Input Leakage Current
T
EST
C
ONDITION
V
IN
= 0V to V
CC
01.06.05 REV 4
S
YMBOL
I
LI
S
UBGROUP
1
M
IN
--
M
AX
2
U
NIT
µA
All data sheets are subject to change without notice
4
©2005 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= 25
°
C +5
°
C)
P
ARAMETER
Operating V
CC
Current
Operating V
PP
Current
Input Voltage
5
CE = PGM = V
IL
T
EST
C
ONDITION
S
YMBOL
I
CC
I
PP
V
IH
V
IL
Output Voltage
I
OH
= -400 µ A
I
OH
= 2.1 mA
1. V
CC
must be applied before V
PP
and removed after V
PP
.
2. V
PP
must not exceed 13V, including overshoot.
3. Do not change V
PP
from V
IL
to 12.5V or 12.5V to V
IL
when CE = low.
V
OH
V
OL
S
UBGROUP
1
1
1
1
1
1
M
IN
--
--
2.2
--
2.4
--
27C1512T
M
AX
30
80
--
0.8
--
0.45
V
U
NIT
mA
mA
V
T
ABLE
8. 27C1512T DC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATIONS 1,2,3,4
4. DC electrical parameters for programming operations are not tested. These parameters are guaranteed by design.
5. Device reliability may be adversely be affected if the device is installed or removed while V
PP
= 12.5V.
Memory
T
ABLE
9. 27C1512T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATIONS 1,2
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Chip Enable Setup TIme
V
PP
Setup Time
V
CC
Setup Time
Output Enable Setup Time
Output Disable Time
PGM Initial Programming Pulse Width
PGM Overprogramming Pulse Width
Data Valid from Output Enable Time
Output Enable Pulse During Data Latch
Output Enable Hold Time
Chip Enable Hold Time
PGM Setup TIme
S
YMBOL
t
AS
t
AH
t
DS
t
DH
t
CES
t
VPS
t
VCS
t
OES
t
DF 3
t
PW
t
OPW
t
OE
t
LW
t
OEH
t
CEH
t
PGMS
S
UBGROUPS
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
M
IN
2
0
2
2
2
2
2
2
0
0.19
0.19
0
1
2
2
2
M
AX
--
--
--
--
--
--
--
--
130
0.21
5.25
150
--
--
--
--
U
NIT
µs
µs
µs
µs
µs
µs
µs
µs
ns
ms
ms
ns
µs
µs
µs
µs
01.06.05 REV 4
All data sheets are subject to change without notice
5
©2005 Maxwell Technologies.
All rights reserved.
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