Schottky Barrier Diode
RB218T-60FH
Applications
Switching power supply
10.0±
0.3
0.1
3.2±0.2
15.0±
0.4
0.2
Datasheet
Dimensions
(Unit : mm)
4.5±
0.3
0.1
2.8±
0.2
0.1
AEC-Q101 Qualified
Structure
Features
1) Cathode common dual type
2) High reliability
1.2
1.3
0.8
5.0±0.2
8.0±0.2
12.0±0.2
Construction
Silicon epitaxial planar type
Absolute
Maximum Ratings
(T
c
= 25°C)
Parameter
ec
N
ew om
m
D
es en
ig de
ns d
f
1
3) Super low I
R
14.0±0.5
2.6±0.5
0.1
0.75±
0.05
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
1
: Manufacture date
Symbol
V
RM
V
R
I
o
Conditions
Duty≦0.5
Repetitive peak reverse voltage
Reverse voltage
or
Limits
60
60
20
100
-
-
150
55
to
150
Min.
-
-
-
-
-
-
0.83
5
2
(1)
(2)
(3)
Cathode Anode
Anode
Unit
V
V
A
A
°C
°C
Direct reverse voltage
Average forward rectified current
R
Parameter
Non-repetitive forward current surge peak
I
FSM
T
j
60Hz half sin wave, resistive load,
I
O
/2 per diode, T
c
=115ºC Max.
60Hz half sin wave, Non-repetitive at
T
a
=25ºC , 1cycle, per diode
Operating junction temperature
ot
Storage temperature
T
stg
N
Electrical
and Thermal Characteristics
(T
j
= 25°C)
Symbol
V
F
I
R
R
th(j-c)
Conditions
I
F
=10A
V
R
=60V
Junction to case
Typ. Max. Unit
V
A
°C/W
Forward voltage
Reverse current
Thermal resistance
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.03 - Rev.A
RB218T-60FH
Electrical
Characteristic Curves
Data Sheet
2500
1200
T
j
=25°C
V
R
=60V
n=30pcs
1150
T
j
=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(nA)
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
2000
1100
1050
1000
1000
500
0
600
REVERSE RECOVERY TIME : t
rr
(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
500
R
400
ot
300
200
N
100
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© 2015 ROHM Co., Ltd. All rights reserved.
ec
N
ew om
m
D
es en
ig de
ns d
f
Ave. : 966pF
950
900
850
800
Ave. : 382nA
1500
I
R
DISPERSION MAP
C
t
DISPERSION MAP
50
45
40
35
30
25
20
15
10
5
0
I
FSM
1cyc
8.3ms
T
a
=25°C
Ave. : 230A
Ave. : 15.8ns
I
FSM
DISPERSION MAP
t
rr
DISPERSION MAP
3/5
or
T
j
=25°C
I
F
=0.5A
I
R
=1.0A
I
rr
/ I
R
=0.25
n=10pcs
2016.03 - Rev.A
ARM Technology
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