RB218T-60FH datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> RB218T-60FH

RB218T-60FH: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN; CategoryDiscrete semiconductor diode; File Size1MB，7 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

RB218T-60FH Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN

RB218T-60FH Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.83 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	100 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	60 V
Maximum reverse current	5 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

Preview

Download Datasheet

View All

Schottky Barrier Diode

RB218T-60FH

Applications

Switching power supply

10.0±

0.3

0.1

3.2±0.2

15.0±

0.4

0.2

Datasheet

Dimensions

(Unit : mm)

4.5±

0.3

0.1

2.8±

0.2

0.1

AEC-Q101 Qualified

Structure

Features

1) Cathode common dual type

2) High reliability

1.2

1.3

0.8

5.0±0.2

8.0±0.2

12.0±0.2

Construction

Silicon epitaxial planar type

Absolute

Maximum Ratings

= 25°C)

Parameter

ew om

es en

ig de

ns d

3) Super low I

14.0±0.5

2.6±0.5

0.1

0.75±

0.05

2.45±0.5 2.45±0.5

(1) (2) (3)

ROHM : TO220FN

: Manufacture date

Symbol

Conditions

Duty≦0.5

Repetitive peak reverse voltage

Reverse voltage

Limits

100

150

55

150

Min.

0.83

(1)

(2)

(3)

Cathode Anode

Anode

Unit

°C

Direct reverse voltage

Average forward rectified current

Parameter

Non-repetitive forward current surge peak

FSM

60Hz half sin wave, resistive load,

/2 per diode, T

=115ºC Max.

60Hz half sin wave, Non-repetitive at

=25ºC , 1cycle, per diode

Operating junction temperature

Storage temperature

stg

Electrical

and Thermal Characteristics

= 25°C)

Symbol

th(j-c)

Conditions

=10A

=60V

Junction to case

Typ. Max. Unit

A

°C/W

Forward voltage

Reverse current

Thermal resistance

www.rohm.com

1/5

2016.03 - Rev.A

RB218T-60FH Related Products

	RB218T-60FH	RB218T-60FHC9
Description	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN	Rectifier Diode,
Reach Compliance Code	compliant	compliant
Is Samacsys	N	N
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Base Number Matches	1	1

Recommended Resources

Narrow pulse infrared light emission circuit

Single junction transistor time relay circuit 2

Warping machine diameter yarn breakage detection circuit

555 traffic intersection traffic light automatic controller circuit (2)

Switching power supply high voltage constant current source circuit diagram

31. Power supply circuit diagram of COMPAQ 1504 TTL color display

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components