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NAND02GR4B2BZB6

Description
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
Categorystorage    storage   
File Size402KB,64 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

NAND02GR4B2BZB6 Overview

128M X 8 FLASH 3V PROM, 35 ns, PDSO48

NAND02GR4B2BZB6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionTFBGA,
Contacts63
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time35 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee0
length12 mm
memory density2147483648 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width9.5 mm
NAND01G-B
NAND02G-B
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Feature summary
High Density NAND Flash memories
Up to 2 Gbit memory array
Up to 64Mbit spare area
Cost effective solutions for mass
storage applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
FBGA
NAND interface
TSOP48 12 x 20mm
Supply voltage
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
Random access: 25µs (max)
Sequential access: 50ns (min)
Page program time: 300µs (typ)
Page size
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
Block size
Serial Number option
Data protection
Hardware and Software Block Locking
Hardware Program/Erase locked during
Power transitions
100,000 Program/Erase cycles
10 years Data Retention
Page Read/Program
Data integrity
Copy Back Program mode
Fast page copy without external
buffering
Internal Cache Register to improve the
program and read throughputs
Block erase time: 2ms (typ)
ECOPACK
®
packages
Development tools
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference
software
Hardware simulation models
Cache Program and Cache Read modes
Fast Block Erase
Status Register
Electronic Signature
Chip Enable ‘don’t care’
for simple interface with microcontroller
February 2006
Rev 4.0
1/64
www.st.com
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