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2N2906A

Description
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
CategoryDiscrete semiconductor    The transistor   
File Size104KB,2 Pages
ManufacturerMicro Electronics
Websitehttp://www.microelectr.com.hk
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2N2906A Overview

600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18

2N2906A Parametric

Parameter NameAttribute value
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1

2N2906A Related Products

2N2906A PN2906 PN2906A
Description 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 PNP switching transistors PNP switching transistors
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A
Collector-emitter maximum voltage 60 V 40 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40
JEDEC-95 code TO-18 TO-92 TO-92
JESD-30 code O-MBCY-W3 O-PBCY-W3 O-PBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 175 °C 140 °C 140 °C
Package body material METAL PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.4 W 0.6 W 0.6 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
Base Number Matches 1 - 1
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