LAB
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
1.02
(0.040)
Max.
SEME
2N2914
2N2916
2N2918
DUAL NPN
PLANAR TRANSISTORS IN
TO77 PACKAGE
12.7 (0.500)
Min.
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
3
2
4
5
6
0.74 (0.029)
1.14 (0.045)
1
45˚
0.71 (0.028)
0.86 (0.034)
TO–77 PACKAGE
PIN 1 – Collector 1
PIN 2 – Base 1
PIN 3 – Emitter 1
PIN 4 – Emitter 2
PIN 5 – Base 2
PIN 6 – Collector 2
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
STG
T
L
NOTES
1. Base – Emitter Diode Open Circuited.
Collector – Base Voltage
Collector – Emitter Voltage 1
Emitter – Base Voltage
Continuous Collector Current
Total Device Dissipation
Total Device Dissipation
T
AMB
= 25°C
Derate above 25°C
T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Lead temperature (Soldering, 10 sec.)
EACH SIDE
TOTAL DEVICE
45V
45V
6V
30
300mW
500mW
1.72mW / °C
2.86W / °C
750mW
1.5W
4.3mW / °C
8.6mW / °C
–65 to 200°C
300°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/95
LAB
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
1
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
T
A
= 150°C
V
CE
= 5V
V
EB
= 5V
V
CE
= 5V
h
FE
DC Current Gain
V
CE
= 5V
V
CE
= 5V
V
BE
V
CE(sat)
h
ib
h
ob
|h
fe
|
C
obo
Base – Emitter Voltage
Collector – Emitter Saturation Voltage
Small Signal Common – Base
Input Impedance
Small Signal Common – Base
Output Admittance
Small Signal Common – Base
Current Gain
Common – Base Open Circuit
Output Capacitance
* Pulse Test: t
p
= 300
m
s ,
d £
1%.
I
B
= 100
m
A
V
CB
= 5V
f = 1kHz
V
CB
= 5V
f = 1kHz
V
CE
= 5V
f = 20MHz
V
CB
= 5V
I
E
= 0
f = 140kHz to 1MHz
I
C
= 500
m
A
3
I
C
= 1mA
V
CE
= 5V
I
B
= 0
I
C
= 10
m
A
T
A
= –55°C
I
C
= 100
m
A
I
C
= 1mA
I
C
= 1mA
I
C
= 1mA
25
I
C
= 100
m
A
I
C
= 0
150
30
225
300
Min.
45
45
6
Typ.
SEME
2N2914
2N2916
2N2918
Max.
Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
I
C
= 10
m
A
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)CEO*
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Collector – Emitter Breakdown Voltage I
C
= 10mA
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
I
E
= 10
m
A
V
CB
= 45V
V
10
10
2
2
600
—
nA
m
A
nA
0.70
0.35
32
1
V
W
m
mho
—
6
pF
Parameter
Test Conditions
I
C
= 100
m
A
I
C
= 100
m
A
I
C
= 100
m
A
I
C
= 100
m
A
2N2916
2N2918
Min. Typ. Max. Min. Typ. Max.
Unit
TRANSISTOR MATCHING CHARACTERISTICS
h
FE1
Static Forward Current V
CE
= 5V
h
FE2
|V
BE1
– V
BE2
|
Gain Balance Ratio
Base – Emitter Voltage
Differential
See Note 2.
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
T
A1
= 25°C
V
CE
= 5V
T
A1
= 25°C
0.9
1
3
5
0.8
1
0.8
1
5
10
1.6
—
|
D
(V
BE1
– V
BE2
)
D
T
A
|
Base – Emitter Voltage
Differential Change With
Temperature
NOTES
I
C
= 10
m
A to 1mA
T
A2
= –55°C
T
A2
= 125°C
mV
mV
2
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
FE1
.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/95
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