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2N3661

Description
1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
CategoryDiscrete semiconductor    The transistor   
File Size810KB,4 Pages
ManufacturerCentral Semiconductor
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2N3661 Overview

1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

2N3661 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-39
package instructionTO-39, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1
2N3467
2N3468
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3467 and
2N3468 are silicon PNP switching transistors designed
for core driver applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
2N3467
40
40
5.0
1.0
1.0
5.0
-65 to +200
175
35
2N3468
50
50
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N3467
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=30V
-
100
ICBO
VCB=30V, TA=100°C
-
15
ICEV
IBEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
VCE=30V, VBE=3.0V
VCE=30V, VBE=3.0V
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
VCE=1.0V,
VCE=1.0V,
IC=150mA
IC=500mA
-
-
40
40
5.0
-
-
-
-
0.8
-
40
40
40
100
120
-
-
-
0.3
0.5
1.0
1.0
1.2
1.6
-
120
-
2N3468
MIN
MAX
-
100
-
-
-
50
50
5.0
-
-
-
-
0.8
-
25
25
20
15
100
120
-
-
-
0.36
0.6
1.2
1.0
1.2
1.6
-
75
-
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
V
V
VCE=5.0V, IC=1.0A
R2 (26-July 2013)

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